Single Bipolar Transistors BC237C-AP product image

BC237C-AP

  • Description:TRANS NPN 45V 0.1A TO-92
  • Series:-

SKU:c7fbb23c97c1 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

BC237C-AP is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is TRANS NPN 45V 0.1A TO-92. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC237C-AP

  • Description:TRANS NPN 45V 0.1A TO-92
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tape & Box (TB)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:380 @ 2mA, 5V
  • Power - Max:350 mW
  • Frequency - Transition:200MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BC237C-AP

BC237C-AP

Single Bipolar Transistors Overview

The BC237C-AP is an NPN silicon small-signal transistor manufactured by MCC. It features a collector-emitter voltage rating of 45 V and a continuous collector current capacity of 100 mA. The device utilizes a TO-92 through-hole package with a standard body style. Electrical characteristics include a DC current gain (hFE) range of 120 to 800 at specified test conditions, a collector cutoff current of 15 nA, and a transition frequency of 200 MHz. Thermal management supports a maximum junction temperature of 150°C and a total power dissipation of 350 mW.

Single Bipolar Transistors Feature Summary

  • NPN silicon construction for general-purpose amplification
  • High DC current gain suitable for low-level signal processing
  • Radial leaded TO-92 package for standard PCB mounting

Single Bipolar Transistors Applications

  • General-purpose switching circuits
  • Low-frequency amplification stages
  • Driver circuits for logic interfaces

Single Bipolar Transistors Procurement Notes

Verify the specific suffix AP against official MCC documentation to confirm availability status and exact electrical tolerances. Confirm RoHS compliance and packaging type directly with the manufacturer or authorized distributors before procurement. Ensure the component matches the required pinout configuration for the target application design.

Single Bipolar Transistors Selection Notes

Select this component when a moderate gain NPN transistor is required for low-power applications. Compare hFE ranges against circuit requirements to ensure adequate amplification. Verify that the 45V voltage rating exceeds the maximum operating voltage in the intended circuit environment.

Single Bipolar Transistors Part Context

This part belongs to the BC237 series of NPN transistors. It shares the same physical package and basic structure as variants like BC237A and BC237B, differing primarily in the guaranteed DC current gain ranges. The series is designed for general-purpose use in consumer electronics and industrial control systems.

Single Bipolar Transistors Replacement Considerations

Compatible substitutes include BC237A, BC237B, and BC237 from various manufacturers such as ON Semiconductor or Diodes Inc., provided the hFE binning meets the specific circuit requirements.

BC237C-APBC237C-AP

Click on the inquiry