Single Bipolar Transistors BC237C product image

BC237C

$0.08
  • Description:TRANS NPN 45V 0.1A TO92
  • Series:-

SKU:e012403cd6e8 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

BC237C is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 45V 0.1A TO92. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC237C

  • Description:TRANS NPN 45V 0.1A TO92
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:380 @ 2mA, 5V
  • Power - Max:350 mW
  • Frequency - Transition:200MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92 (TO-226)

Single Bipolar Transistors datasheet and documents for BC237C

BC237C

Single Bipolar Transistors Overview

The BC237C is an NPN silicon amplifier transistor manufactured by onsemi. It operates with a maximum collector-emitter voltage of 45 V and a continuous collector current of 100 mA. The device provides a minimum DC current gain (hFE) ranging from 290 to 800 at IC = 10 mA, VCE = 5.0 V. Total power dissipation is rated at 350 mW at 25°C ambient temperature. The component utilizes a TO-92 plastic package.

Single Bipolar Transistors Feature Summary

  • High DC current gain suitable for amplification applications
  • NPN silicon construction for general-purpose use
  • Low saturation voltage characteristics

Single Bipolar Transistors Applications

  • Amplifier circuits
  • Switching applications
  • General-purpose signal processing

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to confirm package type and shipping quantity. Confirm RoHS compliance status if required for the assembly process. Ensure the procurement channel sources directly from authorized distributors or the manufacturer to guarantee authenticity and traceability of the semiconductor components.

Single Bipolar Transistors Selection Notes

Select this component when high current gain is required for low-current signal amplification. The BC237C variant offers significantly higher hFE compared to standard variants. Verify that the thermal resistance and power dissipation limits align with the circuit's operating conditions and ambient temperature constraints.

Single Bipolar Transistors Part Context

This part belongs to the BC237 family of NPN silicon transistors designed for amplifier applications. The 'C' suffix denotes a specific binning category for DC current gain, providing higher gain performance than the 'B' or standard versions within the same series.

Single Bipolar Transistors Replacement Considerations

BC237B

Single Bipolar Transistors FAQ

What is the minimum DC current gain for the BC237C?

The minimum DC current gain (hFE) for the BC237C is 290 when measured at IC = 10 mA and VCE = 5.0 V.

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) rating for the BC237C is 45 Vdc.

Which package style does the BC237C utilize?

The BC237C utilizes the TO-92 plastic package, specifically Case 29 Style 17.

BC237CBC237C
$0.08
Buy Now