BC239ABU

Single Bipolar Transistors Overview

The onsemi BC239ABU is an NPN silicon epitaxial planar transistor designed for amplifier applications. It features a maximum collector-emitter voltage of 25 V and a continuous collector current of 100 mA. The device offers a minimum DC current gain (hFE) of 120, ensuring reliable signal amplification. Packaged in a TO-92 plastic housing with three pins, it supports a maximum power dissipation of 350 mW at 25°C ambient temperature. The component operates within a junction temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• NPN silicon epitaxial construction optimized for linear amplifier circuits
• High DC current gain ensures effective signal amplification performance
• Robust thermal stability supporting operation up to 150°C junction temperature

Single Bipolar Transistors Applications

• General-purpose small signal amplification
• Low-noise audio pre-amplifier stages
• Voltage regulation control circuits

Single Bipolar Transistors Procurement Notes

Verify the specific suffix ABU against official datasheets to confirm the exact hFE binning grade. Ensure the TO-92 package dimensions match the target PCB footprint. Confirm RoHS compliance status if required by the final assembly specifications. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components.

Single Bipolar Transistors Selection Notes

Select this component when low-voltage amplification with moderate current handling is required. The BC239ABU serves as a complement to the PNP BC240 series for push-pull configurations. Consider the 25 V breakdown voltage limit for supply rail compatibility. Evaluate thermal management requirements given the 350 mW dissipation rating in the TO-92 package.

Single Bipolar Transistors Part Context

This transistor belongs to the BC237/BC238/BC239 family of NPN silicon amplifier transistors. Variants differ primarily by collector-emitter voltage ratings: BC237 (45 V), BC238 (25 V), and BC239 (25 V). The BC239ABU specifically denotes the 25 V version with defined gain characteristics. These devices are widely used in consumer electronics and industrial control systems requiring small-signal processing.

Single Bipolar Transistors Replacement Considerations

• BC239B
• BC239C

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the BC239ABU?

The maximum collector-emitter voltage (VCEO) is 25 V.

Is the BC239ABU complementary to another transistor?

Yes, it is the NPN complement to the PNP BC240 series transistor.

What is the minimum DC current gain specified for this part?

The minimum DC current gain (hFE) is 120.