Single Bipolar Transistors BC239C product image

BC239C

$0.08
  • Description:TRANS NPN 25V 0.1A TO92
  • Series:-

SKU:080ec5061dea Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

BC239C is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 25V 0.1A TO92. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC239C

  • Description:TRANS NPN 25V 0.1A TO92
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):25 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:380 @ 2mA, 5V
  • Power - Max:350 mW
  • Frequency - Transition:280MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92 (TO-226)

Single Bipolar Transistors datasheet and documents for BC239C

BC239C

Single Bipolar Transistors Overview

The BC239C is an NPN silicon small-signal amplifier transistor manufactured by onsemi. It operates with a maximum collector-emitter voltage of 25 V and a continuous collector current of 100 mA. The device features a minimum DC current gain (hFE) of 120 at IC = 10 mA and up to 800 at IC = 100 mA. It utilizes a TO-92 plastic package with a total power dissipation rating of 350 mW at 25°C ambient temperature. The component supports an operating and storage temperature range from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

  • NPN silicon planar epitaxial construction for reliable signal amplification
  • High DC current gain suitable for low-level signal processing
  • Low saturation voltage characteristics for efficient switching operations

Single Bipolar Transistors Applications

  • General-purpose amplifier circuits
  • Switching applications requiring moderate current handling
  • Audio pre-amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's documentation to confirm package type and lead finish specifications. Ensure compliance with RoHS directives if required, as standard packages may differ from Pb-Free variants. Confirm thermal resistance values match the intended mounting configuration for accurate junction temperature calculations during design validation.

Single Bipolar Transistors Selection Notes

Select this component when a 25 V collector-emitter breakdown voltage is sufficient for the circuit requirements. The 100 mA continuous current rating makes it appropriate for driving low-power loads or interfacing with other logic families. Consider the TO-92 package constraints regarding thermal dissipation capabilities in enclosed environments compared to surface-mount alternatives.

Single Bipolar Transistors Part Context

This device belongs to the BC237/BC239 series of NPN general-purpose transistors. While sharing similar physical packaging and basic operational principles with the BC237C, the BC239C is distinguished by its lower voltage ratings. This series is designed for versatile use in consumer electronics and industrial control systems where standard signal amplification is required.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the BC237C, provided the application does not exceed the 25 V collector-emitter voltage limit. Other compatible devices within the same family are BC239B and BC239RLRE.

BC239CBC239C
$0.08
Buy Now