BC307B TIN/LEAD

$0.22

Description：45V 100MA 500MW TH TRANSISTOR-SM
Series：-

SKU:29745cc3ceb6 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

BC307B TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 45V 100MA 500MW TH TRANSISTOR-SM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC307B TIN/LEAD

Description：45V 100MA 500MW TH TRANSISTOR-SM
Series：-
Mfr：Central Semiconductor Corp
Package：Box
Transistor Type：PNP
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：45 V
Vce Saturation (Max) @ Ib, Ic：300mV @ 5mA, 10mA
Current - Collector Cutoff (Max)：15nA
DC Current Gain (hFE) (Min) @ Ic, Vce：180 @ 2mA, 5V
Power - Max：500 mW
Frequency - Transition：130MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for BC307B TIN/LEAD

BC307B TIN/LEAD

Single Bipolar Transistors Overview

The BC307B TIN/LEAD is a PNP silicon small-signal bipolar junction transistor manufactured by Central Semiconductor Corp. It utilizes a TO-92 through-hole package and supports a maximum collector current of 100 mA with a collector-emitter voltage rating of 45 V. The device features a minimum DC current gain (hFE) of 200, ensuring high amplification capability for general-purpose switching and amplification applications.

Single Bipolar Transistors Feature Summary

PNP polarity configuration for complementary circuit designs
High DC current gain suitable for low-noise amplification
Through-hole mounting in a standard TO-92 case

Single Bipolar Transistors Applications

General-purpose signal amplification
Low-noise audio pre-amplifier stages
Complementary switching circuits

Single Bipolar Transistors Procurement Notes

Verify the specific binning grade for the 'B' suffix to confirm the minimum hFE threshold meets design requirements. Confirm the lead finish matches the specified tin/lead composition for compatibility with legacy soldering processes or RoHS exemptions. Cross-reference datasheets from authorized distributors to ensure consistency with Central Semiconductor's official specifications.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with moderate current handling and high gain is required in a through-hole form factor. Compare against other BC307 variants to determine if the specific gain binning aligns with circuit sensitivity. Ensure thermal management strategies account for the power dissipation limits inherent to the TO-92 plastic package during continuous operation.

Single Bipolar Transistors Part Context

This part belongs to the BC307 series of PNP transistors, widely used in analog electronics. Central Semiconductor produces this variant using silicon planar technology. The device serves as a fundamental building block for discrete amplifier stages and logic interface circuits requiring reliable PNP switching characteristics.