Single Bipolar Transistors BC307BZL1G product image

BC307BZL1G

$0.04
  • Description:TRANS PNP 45V 0.1A TO92
  • Series:-

SKU:87b47fe3d156 Category: Brand:

  
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BC307BZL1G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 45V 0.1A TO92. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC307BZL1G

  • Description:TRANS PNP 45V 0.1A TO92
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:350 mW
  • Frequency - Transition:280MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body, Formed Leads
  • Supplier Device Package:TO-92 (TO-226)

Single Bipolar Transistors datasheet and documents for BC307BZL1G

BC307BZL1G

Single Bipolar Transistors Overview

The BC307BZL1G is a PNP silicon amplifier transistor manufactured by onsemi. It features a maximum collector-emitter voltage of -45 Vdc and a continuous collector current of -100 mAdc. The device operates within a junction temperature range of -55 to +150 °C. Electrical characteristics include a minimum DC current gain (hFE) of 200 at IC = -10 mAdc, with a typical current-gain bandwidth product of 280 MHz. Thermal resistance from junction-to-ambient is 357 °C/W.

Single Bipolar Transistors Feature Summary

  • Designed for low-noise amplifier applications
  • Capable of linear and switching operations
  • Constructed using PNP silicon technology

Single Bipolar Transistors Applications

  • Audio amplification circuits
  • General-purpose signal processing
  • Low-noise preamplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix ZL1G corresponds to the TO-92 package in an ammo box configuration containing 2000 units. Confirm Pb-Free status via the 'G' suffix designation. Ensure compatibility with standard through-hole mounting requirements for the specified case style.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with high DC current gain and low noise figure is required. Verify that the -45 V collector-emitter voltage rating meets the circuit's peak reverse voltage requirements. Consider the thermal dissipation limits relative to the ambient operating environment.

Single Bipolar Transistors Part Context

This part belongs to the BC307 series of PNP silicon transistors intended for amplifier duties. It shares the same electrical specifications as the BC307B but differs in packaging and shipping quantity. The series is characterized by high gain and low noise performance suitable for sensitive analog applications.

Single Bipolar Transistors Replacement Considerations

Compatible substitutes include the BC307BRL1G and BC307BG, which share identical electrical ratings and pin configurations. Verify package dimensions and lead spacing match the existing PCB footprint before substitution.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (VCEO) is -45 Vdc.

Is this component RoHS compliant?

Yes, the 'G' suffix indicates the package is Pb-Free and compliant with RoHS standards.

What is the typical current-gain bandwidth product?

The typical current-gain bandwidth product (fT) is 280 MHz at IC = -10 mAdc and VCE = -5.0 Vdc.

BC307BZL1GBC307BZL1G
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