BC308_J35Z

Single Bipolar Transistors Overview

The onsemi BC308_J35Z is a PNP silicon small-signal bipolar junction transistor (BJT) housed in a TO-92-3 surface-mount package. It features a collector-emitter breakdown voltage of 25V and a continuous collector current rating of 100mA. The device offers a transition frequency of 130MHz and a maximum power dissipation of 500mW, with a DC current gain (hFE) typically ranging from 120 to 640 depending on the specific sub-grade. Designed for general-purpose amplification and switching applications, it operates within a junction temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• PNP polarity configuration suitable for low-side or high-side switching topologies
• High transition frequency enabling effective performance in RF and audio signal processing
• Robust thermal management capabilities with a 500mW power dissipation limit
• Wide DC current gain variation allowing selection for specific amplification requirements

Single Bipolar Transistors Applications

• General-purpose signal amplification circuits
• Low-power switching applications in consumer electronics
• Audio pre-amplifier stages requiring low noise characteristics
• Driver circuits for small loads in embedded systems

Single Bipolar Transistors Procurement Notes

Verify the specific suffix J35Z against the manufacturer's latest datasheet to confirm the exact hFE binning and electrical tolerances. Ensure the TO-92-3 SMD footprint matches the PCB design constraints. Confirm RoHS compliance status for the specific manufacturing batch if required by regulatory standards. Cross-reference the pinout configuration to prevent installation errors during assembly.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with moderate voltage handling and high-speed switching is required in a compact surface-mount form factor. Consider the 25V VCEO limit for circuit protection requirements. Evaluate the thermal resistance of the TO-92-3 package against the expected power dissipation in the final application environment to ensure reliable operation under load conditions.

Single Bipolar Transistors Part Context

The BC308 series represents a family of general-purpose PNP transistors widely used in analog and digital circuits. The BC308_J35Z variant specifically denotes a particular gain grouping within this lineage. This component serves as a fundamental building block for discrete amplifier designs and logic interface circuits, offering a balance between performance and cost-effectiveness for mass-produced electronic devices.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the BC308B and BC308C, which share identical pinouts and mechanical dimensions but differ in DC current gain ranges. Verify that the alternative part meets the minimum hFE requirements of the original design. Ensure the replacement maintains the same TO-92-3 SMD package profile to fit existing footprints without board modifications.