BC327-016G

Single Bipolar Transistors Overview

The onsemi BC327-016G is a PNP silicon epitaxial planar transistor designed for amplifier and switching applications. It operates with a collector-emitter voltage of -45 Vdc and supports a continuous collector current of -800 mAdc. The device dissipates up to 625 mW at 25°C ambient temperature, derating by 5.0 mW/°C above this threshold. It features a DC current gain (hFE) range of 100 to 250 when tested at -100 mA and -1.0 V. The transition frequency is typically 260 MHz at -10 mA and -5.0 V. The component utilizes a TO-92 package with lead-free construction.

Single Bipolar Transistors Feature Summary

• PNP silicon epitaxial planar construction optimized for general-purpose amplification and high-speed switching tasks.
• Lead-free packaging compliant with environmental directives while maintaining standard TO-92 mechanical dimensions.
• High current handling capability supporting up to 800 mA continuous operation within specified thermal limits.

Single Bipolar Transistors Applications

• General-purpose linear amplifier circuits
• Digital logic interface and switching stages
• Complementary pairing with NPN transistors such as the BC337

Single Bipolar Transistors Procurement Notes

Verify that the specific order number matches the required hFE binning, as the '016' suffix designates a specific gain range distinct from other variants in the family. Confirm the presence of the 'G' suffix to ensure the procurement of the Pb-Free version. Check the manufacturer's latest documentation for any product change notices or obsolescence announcements prior to finalizing supply agreements.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with moderate power dissipation and defined current gain is required. Ensure the application voltage does not exceed the -45 V collector-emitter rating. Consider the thermal resistance characteristics if operating near maximum power limits. Verify that the TO-92 through-hole mounting style aligns with the target PCB layout requirements.

Single Bipolar Transistors Part Context

This part belongs to the BC327 series of PNP amplifier transistors manufactured by onsemi. The series includes multiple variants differentiated primarily by their DC current gain ranges, indicated by numerical suffixes. The BC327-016G specifically denotes the lead-free version of the standard gain variant. These devices are commonly used in consumer electronics and industrial control systems requiring reliable small-signal processing.

Single Bipolar Transistors Replacement Considerations

BC327-016

Single Bipolar Transistors FAQ

What is the minimum DC current gain for the BC327-016G?

The minimum DC current gain (hFE) is 100, measured at a collector current of -100 mA and a collector-emitter voltage of -1.0 V.

How does the 'G' suffix affect the device functionality?

The 'G' suffix indicates that the component is packaged in a Pb-Free (lead-free) configuration. It does not alter the electrical characteristics or pinout compared to the non-G version.

What is the maximum junction temperature for this transistor?

The maximum operating and storage junction temperature range is from -55°C to +150°C.