BC327

Single Bipolar Transistors Overview

The BC327 is a PNP silicon amplifier transistor manufactured by onsemi, housed in a TO-92 (TO-226) package. It features a maximum collector-emitter voltage of -45 Vdc and a continuous collector current of -800 mAdc. The device provides a total power dissipation of 625 mW at 25°C ambient temperature, with a thermal resistance junction-to-ambient of 200 °C/W. Electrical characteristics include a DC current gain ranging from 100 to 630 depending on the specific sub-model, a transition frequency of 260 MHz, and a collector-emitter saturation voltage of -0.7 Vdc under specified conditions.

Single Bipolar Transistors Feature Summary

• PNP silicon construction designed for general-purpose amplifier applications
• Capable of handling up to 800 mA continuous collector current
• High transition frequency supporting signal amplification tasks
• Available in lead-free compliant packaging options

Single Bipolar Transistors Applications

• General-purpose amplifier circuits
• Switching applications requiring moderate current drive
• Audio signal processing stages

Single Bipolar Transistors Procurement Notes

Verify the exact ordering suffix against the manufacturer's official documentation to ensure correct binning and packaging specifications. Confirm that the component meets RoHS compliance requirements if applicable to your assembly process. Check for any recent product change notices or obsolescence announcements directly from onsemi before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select the appropriate sub-model variant based on the required DC current gain range, as performance varies between standard and high-gain versions. Ensure the operating environment stays within the specified -55°C to +150°C junction temperature limits. Verify that the thermal management strategy accommodates the 625 mW power dissipation rating at the expected ambient temperature.

Single Bipolar Transistors Part Context

This component belongs to the BC327 series of PNP bipolar junction transistors produced by onsemi. The series includes multiple variants differentiated primarily by their DC current gain classifications. These transistors are widely utilized in discrete semiconductor designs where reliable amplification and switching capabilities are required in a compact through-hole package.

Single Bipolar Transistors Replacement Considerations

BC327/D

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for this transistor?

The maximum collector-emitter voltage (VCEO) is rated at -45 Vdc.

How does the DC current gain vary across the BC327 series?

The minimum DC current gain ranges from 100 for the standard BC327 to 250 for the BC327-40 variant, with maximum gains reaching up to 630.

What is the typical transition frequency of the BC327?

The current-gain bandwidth product (fT) is typically 260 MHz when measured at -10 mA collector current and -5.0 V collector-emitter voltage.