BC32740TA

Single Bipolar Transistors Overview

The BC32740TA is a PNP epitaxial silicon transistor from the BC327 series, manufactured by onsemi. It features a maximum collector-emitter voltage (VCEO) of -45 V and a continuous DC collector current (IC) of -800 mA. The device operates within a junction temperature range of -55°C to +150°C and dissipates up to 625 mW. Packaged in a lead-free TO-92-3 Ammo configuration, it offers a DC current gain (hFE) classification of 250 to 630 at IC = -100 mA. Key electrical characteristics include a collector-emitter saturation voltage of -0.7 V at -500 mA and a transition frequency (fT) of 100 MHz.

Single Bipolar Transistors Feature Summary

• Designed for switching and amplifier applications
• Suitable for AF-driver stages and low-power output stages
• Functions as a complement to NPN transistors such as the BC337 and BC338

Single Bipolar Transistors Applications

• Switching circuits
• Amplifier applications
• AF-driver stages
• Low-power output stages

Single Bipolar Transistors Procurement Notes

Verify the specific hFE binning requirements against the datasheet's classification table to ensure the component meets the necessary gain thresholds for your circuit design. Confirm that the TO-92-3 Ammo packaging aligns with your automated assembly or manual insertion processes. Ensure compliance with RoHS standards and verify that the part is suitable for the intended operating temperature range.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with moderate power handling and high current gain is required. The BC32740TA provides a specific hFE range of 250 to 630, distinguishing it from lower-gain variants like the BC32716 or BC32725. Consider the thermal resistance and power dissipation limits when designing heat management solutions for continuous operation.

Single Bipolar Transistors Part Context

This part belongs to the BC327 family of PNP epitaxial silicon transistors originally developed by Fairchild Semiconductor and now managed by onsemi following their integration. The '40' suffix indicates the specific DC current gain binning, while the 'TA' suffix denotes the TO-92-3 Ammo packaging format. This family serves as the complementary counterpart to the widely used BC337 NPN series.

Single Bipolar Transistors Replacement Considerations

BC32740BU

Single Bipolar Transistors FAQ

What is the difference between the BC32740TA and BC32740BU?

The primary difference lies in the packaging method. The BC32740TA comes in an Ammo pack, while the BC32740BU is supplied in Bulk packaging. Both share identical electrical characteristics and pinouts.

Is the BC32740TA RoHS compliant?

Yes, the BC32740TA is lead-free and RoHS compliant, as indicated in the ordering information section of the datasheet.

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (BVCEO) is -45 V when the base current is zero and the collector current is -10 mA.