BC327BU

Single Bipolar Transistors Overview

The BC327BU is a PNP epitaxial silicon transistor manufactured by onsemi. It operates with a collector-emitter voltage of -45 V and a continuous collector current of -800 mA. The device features a maximum power dissipation of 625 mW at 25°C, derating by 5.0 mW/°C above this temperature. Thermal resistance from junction to ambient is 200 °C/W. The component utilizes a TO-92 3L bulk package.

Single Bipolar Transistors Feature Summary

• Designed for switching and amplifier applications
• Suitable for AF-driver stages and low-power output stages
• Functions as the complement to BC337 / BC338

Single Bipolar Transistors Applications

• Switching circuits
• Amplifier applications
• AF-driver stages
• Low-power output stages

Single Bipolar Transistors Procurement Notes

Verify the specific hFE classification required for the application, as the base part number covers multiple gain ranges (16, 25, 40). Confirm that the TO-92 3L Bulk packing method aligns with assembly requirements. Ensure compliance with RoHS standards and check for any Fairchild-to-onsemi nomenclature updates if sourcing legacy documentation.

Single Bipolar Transistors Selection Notes

Select based on the required DC current gain range, which varies across the BC327 family variants. Consider thermal management needs given the 625 mW power dissipation limit and 200 °C/W thermal resistance. Verify that the -45 V collector-emitter breakdown voltage meets circuit voltage constraints.

Single Bipolar Transistors Part Context

This component belongs to the BC327 series of PNP general-purpose transistors. It serves as the complementary counterpart to the NPN BC337 and BC338 devices. The series is widely used in discrete semiconductor applications requiring moderate current handling and voltage ratings within a standard through-hole package.

Single Bipolar Transistors Replacement Considerations

BC327-16, BC327-25, BC327-40