Single Bipolar Transistors BC327G product image

BC327G

$0.04
  • Description:TRANS PNP 45V 0.8A TO92
  • Series:-

SKU:c4473eea2d67 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

BC327G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 45V 0.8A TO92. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC327G

  • Description:TRANS PNP 45V 0.8A TO92
  • Series:-
  • Mfr:onsemi
  • Package:Bulk,Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):800 mA
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 1V
  • Power - Max:625 mW
  • Frequency - Transition:260MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92 (TO-226)
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BC327G

BC327G

Single Bipolar Transistors Overview

The onsemi BC327G is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector current of 800 mA and a collector-emitter breakdown voltage of 45 V. The device operates within a junction temperature range of -55°C to 150°C and dissipates up to 625 mW in a TO-92 package. Key electrical characteristics include a DC current gain (hFE) of at least 100 at 100 mA, a transition frequency of 260 MHz, and a saturated collector-emitter voltage of 700 mV at 50 mA base and 500 mA collector currents.

Single Bipolar Transistors Feature Summary

  • Provides high DC current gain suitable for low-noise amplification stages
  • Capable of handling moderate collector currents for power switching tasks
  • Operates reliably across extended industrial temperature ranges

Single Bipolar Transistors Applications

  • General-purpose signal amplification circuits
  • Low-power switching applications
  • Driver stages for relay or LED control

Single Bipolar Transistors Procurement Notes

Verify the specific suffix G against official manufacturer documentation to confirm pinout configuration and binning specifications. Ensure compatibility with existing PCB footprints and thermal management requirements. Cross-reference datasheet revisions to validate parameter consistency before finalizing component selection for production.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with moderate current handling and high gain is required. Consider the TO-92 package constraints for thermal dissipation limits. Evaluate the transition frequency if high-speed switching performance is critical for the target application circuit design.

Single Bipolar Transistors Part Context

This part belongs to the BC327 family of PNP transistors manufactured by onsemi. It serves as a standard discrete semiconductor solution for analog and digital circuit designs requiring reliable switching and amplification capabilities in compact through-hole packages.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute: BC327-16 (Diotec Semiconductor). Verify pinout and electrical parameters match original requirements before substitution.

BC327GBC327G
$0.04
Buy Now