Single Bipolar Transistors BC337-025 product image

BC337-025

$0.03
  • Description:TRANS NPN 45V 0.8A TO92
  • Series:-

SKU:4a000c31d7cb Category: Brand:

  
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BC337-025 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 45V 0.8A TO92. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC337-025

  • Description:TRANS NPN 45V 0.8A TO92
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):800 mA
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 100mA, 1V
  • Power - Max:625 mW
  • Frequency - Transition:210MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92 (TO-226)
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BC337-025

BC337-025

Single Bipolar Transistors Overview

The onsemi BC337-025 is an NPN silicon epitaxial planar transistor designed for switching and audio frequency amplifier applications. It features a maximum collector current of 800 mA and a collector-emitter voltage rating of 45 V. The device belongs to the -25 gain subgroup, ensuring a minimum DC current gain (hFE) of 250 at a collector current of 100 mA. Packaged in a TO-92 through-hole case, it supports a maximum power dissipation of 625 mW and operates within a junction temperature range up to 150 °C.

Single Bipolar Transistors Feature Summary

  • Optimized for low-power switching and audio driver stages
  • High DC current gain suitable for sensitive signal amplification
  • Complementary pairing available with BC327/BC328 PNP devices

Single Bipolar Transistors Applications

  • Audio pre-amplifier circuits
  • General-purpose low-power switching
  • Driver transistors in logic interfaces

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official datasheets to confirm the hFE binning group. Ensure the package type matches the required mounting style. Confirm RoHS compliance status if environmental regulations apply to the final assembly. Cross-reference the manufacturer part number with authorized distributor listings to avoid counterfeit components.

Single Bipolar Transistors Selection Notes

Select this component when high current gain is required for small-signal amplification. Verify that the 45 V collector-emitter voltage exceeds the circuit's peak operating voltage. Consider thermal management requirements given the 625 mW power dissipation limit in the TO-92 package. Check compatibility with complementary PNP transistors if push-pull configurations are needed.

Single Bipolar Transistors Part Context

This transistor is part of the widely used BC337 series, which includes variants differentiated by their DC current gain ranges. The -25 designation specifically indicates the gain binning, distinguishing it from lower gain versions like the -16 or higher gain -40 models. This series is standard for general-purpose NPN applications requiring reliable performance in consumer electronics and industrial control systems.

Single Bipolar Transistors Replacement Considerations

Compatible substitutes include BC337-25, BC337-25G, and BC337-25BU. Verify that alternative manufacturers meet the same electrical specifications for VCEO, IC, and hFE grouping.

BC337-025BC337-025
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