Single Bipolar Transistors BC337-40 B1G product image

BC337-40 B1G

  • Description:TRANS NPN 45V 0.8A TO-92
  • Series:-

SKU:d3a0191abebf Category: Brand:

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BC337-40 B1G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is TRANS NPN 45V 0.8A TO-92. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC337-40 B1G

  • Description:TRANS NPN 45V 0.8A TO-92
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):800 mA
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100mA, 5V
  • Power - Max:625 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BC337-40 B1G

BC337-40 B1G

Single Bipolar Transistors Overview

The BC337-40 B1G is an NPN silicon epitaxial planar transistor manufactured by Taiwan Semiconductor Corporation. It belongs to the BC337 series, which is categorized by DC current gain groups; the -40 suffix indicates a high-gain variant with a minimum hFE of 250 and a maximum of 630 at specified test conditions. The device supports a maximum collector current (Ic) of 800 mA and a collector-emitter breakdown voltage (Vceo) of 45 V. Key electrical parameters include a transition frequency (fT) of 100 MHz and a power dissipation (Pd) of 625 mW in a TO-92 package.

Single Bipolar Transistors Feature Summary

  • High DC current gain classification for sensitive signal amplification
  • Low collector-emitter saturation voltage for efficient switching
  • RoHS compliant and halogen-free construction

Single Bipolar Transistors Applications

  • Audio frequency amplifier stages
  • General-purpose switching circuits
  • Driver transistors for output stages

Single Bipolar Transistors Procurement Notes

Verify the specific datasheet version from Taiwan Semiconductor to confirm the exact hFE binning limits for the -40 grade, as specifications may vary slightly between manufacturing revisions. Ensure the TO-92 package marking matches the B1G suffix requirements for lead-free compliance. Cross-reference pinout configurations with standard TO-92 layouts before PCB integration.

Single Bipolar Transistors Selection Notes

Select this component when circuit design requires higher current gain than standard general-purpose transistors provide. The -40 grouping offers tighter gain tolerances suitable for linear applications. Compare against other BC337 variants (-16, -25) if lower gain or different cost structures are acceptable for the specific application requirements.

Single Bipolar Transistors Part Context

This part is part of the widely used BC337 family of NPN small-signal transistors. The BC337 series is standardized across multiple manufacturers for compatibility in audio and switching designs. The Taiwan Semiconductor version adheres to the industry-standard pinout and electrical characteristics defined for the BC337 nomenclature.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include BC337-40 from other manufacturers such as onsemi or Diotec, provided they meet the same -40 gain binning. Generic equivalents like 2N5088 may function but require verification of gain and voltage ratings.

BC337-40 B1GBC337-40 B1G

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