BC33716_J35Z

Single Bipolar Transistors Overview

The BC337-16_J35Z is an NPN silicon small-signal transistor manufactured by onsemi. It features a maximum collector current of 800 mA and a collector-emitter voltage rating of 45 V. The device utilizes a TO-92 (TO-226AA) three-pin through-hole package. It is designed for general-purpose amplification and switching applications within electronic circuits.

Single Bipolar Transistors Feature Summary

• NPN epitaxial silicon construction
• General-purpose amplification capability
• Through-hole mounting configuration

Single Bipolar Transistors Applications

• General-purpose signal amplification
• Electronic switching circuits
• Driver stages in consumer electronics

Single Bipolar Transistors Procurement Notes

Verify the specific suffix _J35Z against official manufacturer documentation to confirm binning or packaging specifications. Ensure compatibility with existing thermal management requirements for the TO-92 package. Cross-reference datasheets from authorized distributors to validate electrical parameters before integration into final designs.

Single Bipolar Transistors Selection Notes

Select this component for low-power NPN switching tasks requiring moderate current handling. Compare hFE gain ranges against circuit biasing needs. Consider the TO-92 package constraints regarding power dissipation limits compared to surface-mount alternatives when designing for high-density layouts.

Single Bipolar Transistors Part Context

This part belongs to the BC337 family of NPN transistors, widely used in analog and digital logic interfaces. The J35Z suffix typically denotes specific manufacturing lot codes or binning variations defined by onsemi for quality control and performance consistency across production batches.