BC33716TAR

Single Bipolar Transistors Overview

The onsemi BC33716TAR is an NPN silicon epitaxial planar transistor housed in a TO-92-3 kinked lead package. It features a maximum collector-emitter voltage (VCEO) of 45 V and a collector-base voltage (VCBO) of 50 V. The device supports a continuous DC collector current of 800 mA with a power dissipation rating of 625 mW. Key electrical characteristics include a gain-bandwidth product (fT) of 100 MHz, a collector-emitter saturation voltage of 700 mV, and a DC current gain (hFE) range of 160 to 630. Operating temperatures extend from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• NPN polarity configuration for general-purpose switching and amplification
• Epitaxial silicon construction for reliable performance
• Through-hole mounting compatibility via TO-92-3 kinked lead package

Single Bipolar Transistors Applications

• Audio driver stages
• Low-power output stages
• General-purpose switching circuits

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'TA' or 'TAR' against the manufacturer's official datasheet to confirm packaging type and binning. Ensure the hFE gain range matches the design requirements, as variations exist within the BC337 family. Confirm RoHS compliance status through the latest component documentation before integration.

Single Bipolar Transistors Selection Notes

Select this component when a standard NPN transistor with moderate current handling and high gain is required. The TO-92 package suits prototyping and low-volume production. Compare hFE bins if precise gain control is necessary. Ensure thermal management aligns with the 625 mW dissipation limit in the final enclosure design.

Single Bipolar Transistors Part Context

This part belongs to the BC337 series of small-signal NPN transistors manufactured by onsemi. The series is widely used in consumer electronics and industrial controls. The BC33716 variant specifically denotes a defined DC current gain range, distinguishing it from other gain bins like the BC33725 or BC33740 within the same voltage and current specifications.

Single Bipolar Transistors Replacement Considerations

BC33716TA

Single Bipolar Transistors FAQ

What is the DC current gain range for the BC33716TAR?

The DC current gain (hFE) ranges from 160 to 630 at a collector current of 100 mA.

Is the BC33716TAR compatible with PNP counterparts?

Yes, it is electrically complementary to the BC327 series PNP transistors for push-pull applications.

What is the maximum junction temperature?

The maximum operating junction temperature is +150°C.