Single Bipolar Transistors BC33725TA product image

BC33725TA

$0.26
  • Description:TRANS NPN 45V 0.8A TO-92-3
  • Series:-

SKU:ade58be3fc05 Category: Brand:

  
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BC33725TA is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 45V 0.8A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC33725TA

  • Description:TRANS NPN 45V 0.8A TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Cut Tape (CT),Tape & Box (TB)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):800 mA
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 100mA, 1V
  • Power - Max:625 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BC33725TA

BC33725TA

Single Bipolar Transistors Overview

The onsemi BC33725TA is a silicon NPN epitaxial planar transistor housed in a TO-92-3 kinked lead package. It supports a maximum collector current of 800 mA and a collector-emitter voltage of 45 V, with a collector-base voltage rating of 50 V. The device features a power dissipation capacity of 625 mW and a transition frequency of 100 MHz. Its DC current gain (hFE) ranges from 160 to 630. The component operates at a maximum junction temperature of +150°C and includes an emitter-base voltage limit of 5 V.

Single Bipolar Transistors Feature Summary

  • Epitaxial planar silicon construction for reliable switching and amplification
  • High DC current gain range suitable for low-power signal processing
  • Kinked lead configuration in TO-92-3 package for secure through-hole mounting

Single Bipolar Transistors Applications

  • General-purpose amplifier circuits
  • Low-power switching applications
  • Audio driver stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix TA against the manufacturer datasheet to confirm the packaging format and binning specifications. Ensure the procurement documentation explicitly references the BC33725TA part number to distinguish it from other variants within the BC337 series that may share similar electrical characteristics but differ in gain grouping or physical packaging details.

Single Bipolar Transistors Selection Notes

Select this component when a standard NPN transistor with moderate current handling and high gain is required for through-hole designs. The BC33725TA is appropriate for general-purpose tasks where the specific hFE binning aligns with circuit requirements. Consider thermal management constraints due to the 625 mW power dissipation limit in small packages.

Single Bipolar Transistors Part Context

This device belongs to the BC337 family of NPN transistors manufactured by onsemi. The family provides complementary PNP options, such as the BC327, facilitating push-pull configurations. The BC337 series is widely utilized in consumer electronics and industrial control systems for basic signal amplification and switching functions.

Single Bipolar Transistors Replacement Considerations

Compatible substitutes include BC337-25BU and BC33725TFR, which share identical electrical ratings and pinout configurations. Verify package compatibility and gain binning before substitution.

BC33725TABC33725TA
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