BC33725TAR

Single Bipolar Transistors Overview

The onsemi BC33725TAR is an NPN silicon epitaxial planar transistor housed in a TO-92-3 leaded package. It supports a maximum continuous collector current of 800 mA and a collector-emitter voltage (VCEO) of 45 V, with a collector-base voltage (VCBO) of 50 V. The device features a minimum DC current gain (hFE) of 160 and a transition frequency (fT) of 100 MHz. Power dissipation is rated at 625 mW, with a maximum junction temperature of 150°C and an emitter-base voltage (VEBO) of 5 V.

Single Bipolar Transistors Feature Summary

• Epitaxial planar silicon construction for reliable switching and amplification
• High DC current gain grouping for consistent amplifier performance
• Low collector-emitter saturation voltage for efficient power handling

Single Bipolar Transistors Applications

• Audio driver stages
• General-purpose switching circuits
• Low-power output stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official datasheets to confirm gain binning and packaging details. Ensure the procurement channel provides valid traceability documentation. Confirm RoHS compliance status matches project requirements. Validate that the TO-92-3 package orientation aligns with PCB footprint specifications before finalizing orders.

Single Bipolar Transistors Selection Notes

Select this component when a high-gain NPN transistor is required for audio or general signal processing applications. The 160 hFE minimum ensures adequate drive capability for low-level signals. Consider thermal management constraints due to the 625 mW dissipation limit in enclosed environments compared to higher-power packages.

Single Bipolar Transistors Part Context

This part belongs to the BC337 series of NPN transistors, which are widely used as complementary devices to the PNP BC327 series. The '25' designation indicates a specific DC current gain range within the family. The 'TAR' suffix typically denotes tape and reel packaging for automated assembly processes.

Single Bipolar Transistors Replacement Considerations

BC33725TA

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for this transistor?

The maximum collector-emitter voltage (VCEO) is 45 V.

Is this transistor suitable for high-frequency RF applications?

No, the transition frequency is 100 MHz, making it suitable for audio frequencies and general switching rather than high-frequency RF operations.

What is the pin configuration for the TO-92-3 package?

With the flat side facing forward, the pins from left to right are Collector, Base, and Emitter.