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BC33840BU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is TRANS NPN 25V 0.8A TO-92-3. Review the specifications below when checking this part for your BOM.
The BC33840BU is an NPN epitaxial silicon bipolar junction transistor manufactured by Fairchild Semiconductor. It features a maximum collector current of 800 mA and a collector-emitter voltage rating of 25 V. The device operates with a transition frequency of 100 MHz and dissipates up to 625 mW of power. Packaged in a TO-92-3 through-hole configuration, it offers a minimum DC current gain (hFE) of 40. The component is RoHS compliant and designed for general-purpose switching and amplifier applications.
Verify the manufacturer marking on the TO-92-3 package matches Fairchild Semiconductor specifications. Confirm the part number suffix BU corresponds to the required lead form and tape/reel or bulk packaging requirements. Ensure the component meets RoHS compliance standards for the intended production environment. Cross-reference the datasheet revision date to confirm technical parameter validity before integration into design schematics.
Select this component when a low-voltage NPN transistor with moderate current handling capabilities is required. The 25 V rating suits low-power control logic interfaces. The TO-92-3 package facilitates easy prototyping and manual assembly. Consider thermal dissipation limits of 625 mW when designing heat management strategies for continuous operation scenarios.
This part belongs to the BC338 series of single NPN transistors. The BC338 series is widely used in consumer electronics and industrial control systems. The BC33840BU variant specifically denotes the 25 V voltage class within this family. It serves as a standard replacement for legacy designs requiring reliable NPN switching performance in compact form factors.
The maximum collector-emitter voltage is 25 V.
Yes, it is housed in a TO-92-3 package designed for through-hole mounting.
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