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BC338BU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 25V 0.8A TO-92-3. Review the specifications below when checking this part for your BOM.
The BC338BU is a PNP bipolar junction transistor manufactured by onsemi, designed for general-purpose amplification and switching applications. It features a maximum collector-emitter voltage of 45V and a continuous collector current of 800mA. The device utilizes silicon technology and is housed in a TO-92-3 through-hole package. Key electrical characteristics include a DC current gain (hFE) ranging from 160 to 630, a transition frequency of 100MHz, and a power dissipation rating of 625mW. The operating temperature range extends from -55°C to +150°C.
Verify the specific hFE binning code required for the application, as gain varies significantly across the 160-630 range. Confirm package authenticity and lead integrity upon receipt. Check for recent Product Change Notifications regarding lead finish or manufacturing site changes. Ensure static-sensitive handling procedures are followed during assembly.
Select this component when a PNP transistor with moderate current capacity and standard voltage ratings is needed. Compare against the BC337 series for NPN equivalents. Consider the hFE spread if precise gain control is critical. Verify that the TO-92 package fits the mechanical constraints of the design.
This part belongs to the BC338 family of general-purpose PNP transistors. It serves as a complement to the BC337 NPN series. The BU suffix typically denotes a specific gain binning or packaging variant within the onsemi portfolio. These devices are widely used in consumer electronics and industrial control systems.
The maximum collector-emitter voltage (VCEO) is 45V.
The DC current gain (hFE) ranges from 160 to 630 depending on the specific binning code.
Yes, the BC338BU is available in RoHS-compliant configurations.
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