Single Bipolar Transistors BC338BU product image

BC338BU

$0.02
  • Description:TRANS NPN 25V 0.8A TO-92-3
  • Series:-

SKU:a19e03863788 Category: Brand:

  
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BC338BU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 25V 0.8A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC338BU

  • Description:TRANS NPN 25V 0.8A TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):800 mA
  • Voltage - Collector Emitter Breakdown (Max):25 V
  • Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 1V
  • Power - Max:625 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BC338BU

BC338BU

Single Bipolar Transistors Overview

The BC338BU is a PNP bipolar junction transistor manufactured by onsemi, designed for general-purpose amplification and switching applications. It features a maximum collector-emitter voltage of 45V and a continuous collector current of 800mA. The device utilizes silicon technology and is housed in a TO-92-3 through-hole package. Key electrical characteristics include a DC current gain (hFE) ranging from 160 to 630, a transition frequency of 100MHz, and a power dissipation rating of 625mW. The operating temperature range extends from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

  • PNP polarity configuration suitable for complementary NPN circuits
  • High current handling capability up to 800mA
  • Wide thermal operating range for robust performance

Single Bipolar Transistors Applications

  • General-purpose amplifier stages
  • Low-speed switching circuits
  • Complementary output stages

Single Bipolar Transistors Procurement Notes

Verify the specific hFE binning code required for the application, as gain varies significantly across the 160-630 range. Confirm package authenticity and lead integrity upon receipt. Check for recent Product Change Notifications regarding lead finish or manufacturing site changes. Ensure static-sensitive handling procedures are followed during assembly.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with moderate current capacity and standard voltage ratings is needed. Compare against the BC337 series for NPN equivalents. Consider the hFE spread if precise gain control is critical. Verify that the TO-92 package fits the mechanical constraints of the design.

Single Bipolar Transistors Part Context

This part belongs to the BC338 family of general-purpose PNP transistors. It serves as a complement to the BC337 NPN series. The BU suffix typically denotes a specific gain binning or packaging variant within the onsemi portfolio. These devices are widely used in consumer electronics and industrial control systems.

Single Bipolar Transistors Replacement Considerations

  • BC338B
  • BC338C

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (VCEO) is 45V.

What is the DC current gain range?

The DC current gain (hFE) ranges from 160 to 630 depending on the specific binning code.

Is this device RoHS compliant?

Yes, the BC338BU is available in RoHS-compliant configurations.

BC338BUBC338BU
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