BC369_J35Z

Single Bipolar Transistors Overview

The BC369_J35Z is a PNP bipolar junction transistor (BJT) manufactured by onsemi. It features a collector-emitter breakdown voltage of 20V and a maximum continuous collector current of 1.5A. The device has a maximum power dissipation of 625mW and a transition frequency of 45MHz. It utilizes a TO-92-3 through-hole package with an operating temperature range from -55°C to 150°C.

Single Bipolar Transistors Feature Summary

• PNP transistor configuration for switching and amplification
• High current capability up to 1.5A
• Wide operating temperature range suitable for harsh environments

Single Bipolar Transistors Applications

• General purpose switching circuits
• Amplifier stages
• Driver applications requiring PNP control

Single Bipolar Transistors Procurement Notes

Verify the specific suffix J35Z against official onsemi documentation to confirm binning or testing criteria. Ensure the component meets RoHS requirements if applicable to your design. Confirm availability status as older part numbers may have limited supply chains.

Single Bipolar Transistors Selection Notes

Select this component for low-voltage, moderate-current PNP applications. Compare hFE ranges and saturation voltages against circuit requirements. Consider thermal management for the TO-92 package given the 625mW power limit.

Single Bipolar Transistors Part Context

This component belongs to the general-purpose BJT family. It serves as a standard replacement for legacy PNP transistors in consumer electronics and industrial control systems where small signal handling and moderate power are required.

Single Bipolar Transistors Replacement Considerations

Check for direct pin-compatible alternatives such as other PNP transistors with similar Vceo and Ic ratings. Verify electrical characteristics match before substitution.