Single Bipolar Transistors BC546BBU product image

BC546BBU

  • Description:TRANS NPN 65V 0.1A TO-92-3
  • Series:-

SKU:ddd6ad6162fe Category: Brand:

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BC546BBU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 65V 0.1A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC546BBU

  • Description:TRANS NPN 65V 0.1A TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):65 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:500 mW
  • Frequency - Transition:300MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3

Single Bipolar Transistors datasheet and documents for BC546BBU

BC546BBU

Single Bipolar Transistors Overview

The BC546BBU is an NPN epitaxial silicon transistor manufactured by onsemi, housed in a TO-92 plastic package. It features a maximum collector current of 100 mA and a collector-emitter voltage rating of 65 V. The device offers a DC current gain (hFE) range of 200 to 400 at a collector current of 2 mA. Key electrical characteristics include a transition frequency of 300 MHz and a collector-base cutoff current of 15 nA. The component supports a junction temperature up to 150 °C and operates within a storage temperature range of -65 °C to +150 °C.

Single Bipolar Transistors Feature Summary

  • NPN epitaxial silicon construction for reliable small-signal performance
  • High DC current gain classification (B suffix) for efficient amplification
  • Low noise operation suitable for sensitive signal processing
  • Lead-free packaging compliant with environmental directives

Single Bipolar Transistors Applications

  • General purpose switching circuits
  • Audio pre-amplification stages
  • Small signal amplification applications

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'BU' against the official onsemi datasheet to confirm it denotes the standard TO-92 plastic package variant. Ensure the procurement documentation explicitly references the BC546B electrical specifications, particularly the hFE binning range of 200-400. Confirm RoHS compliance status through the manufacturer's certificate of conformity rather than assuming based on general product lines.

Single Bipolar Transistors Selection Notes

Select this component when a medium-gain NPN transistor is required for low-power amplification tasks. The BC546B provides a balanced trade-off between current handling capability and voltage tolerance. Consider the TO-92 package constraints for thermal management if continuous high-current operation is anticipated. Verify that the 65V breakdown voltage meets the circuit's peak operating requirements.

Single Bipolar Transistors Part Context

This part belongs to the widely used BC546-BC550 series of general-purpose transistors. The BC546B specifically designates the NPN variant with a medium current gain range. It serves as a fundamental building block in analog electronics, often paired with its PNP complement, the BC557, for push-pull configurations. The series is known for its availability and standardized pinout across multiple manufacturers.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include BC546B from other manufacturers such as NXP or Fairchild, provided they adhere to the same TO-92 pinout and electrical limits. Cross-reference the hFE gain bin to ensure equivalent amplification performance. Verify that alternative sources offer identical lead-free and RoHS compliance certifications.

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