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BC547BTFR is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 45V 0.1A TO-92-3. Review the specifications below when checking this part for your BOM.
The BC547BTFR is a single NPN silicon bipolar junction transistor manufactured by onsemi. It is housed in a TO-92-3 (TO-226AA) through-hole package with kinked leads. The device supports a maximum collector current of 100 mA and a collector-emitter voltage of 45 V. Key electrical parameters include a minimum DC current gain (hFE) of 200 at 2 mA and 5 V, a transition frequency of 300 MHz, and a maximum power dissipation of 500 mW.
Verify the specific suffix 'B' corresponds to the required hFE binning level, as variants like BC547CTA differ significantly in gain specifications. Confirm the tape-and-reel packaging format matches automated assembly requirements. Cross-reference the manufacturer part number with official onsemi documentation to ensure component authenticity and compliance with RoHS standards before finalizing procurement orders.
Select this component when a high-gain NPN transistor is required for small-signal applications. The BC547BTFR offers a guaranteed minimum hFE of 200, distinguishing it from lower-gain variants. Ensure the circuit design accommodates the 45 V collector-emitter voltage limit and 500 mW thermal dissipation constraints within the TO-92-3 package footprint.
This component belongs to the BC547 series of NPN silicon transistors produced by onsemi. The series includes variants such as BC547A, BC547B, and BC547C, which are differentiated primarily by their DC current gain ranges. The BC547BTFR specifically denotes the B-grade gain binning packaged in a tape-and-reel format for efficient surface or through-hole integration.
The minimum DC current gain (hFE) is 200, measured at a collector current of 2 mA and a collector-emitter voltage of 5 V.
The maximum power dissipation is 500 mW.
Yes, onsemi offers Pb-Free packages for this component family.
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