Single Bipolar Transistors BC547BTFR product image

BC547BTFR

$0.03
  • Description:TRANS NPN 45V 0.1A TO-92-3
  • Series:-

SKU:194da058da31 Category: Brand:

  
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BC547BTFR is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 45V 0.1A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC547BTFR

  • Description:TRANS NPN 45V 0.1A TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:500 mW
  • Frequency - Transition:300MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92-3

Single Bipolar Transistors datasheet and documents for BC547BTFR

BC547BTFR

Single Bipolar Transistors Overview

The BC547BTFR is a single NPN silicon bipolar junction transistor manufactured by onsemi. It is housed in a TO-92-3 (TO-226AA) through-hole package with kinked leads. The device supports a maximum collector current of 100 mA and a collector-emitter voltage of 45 V. Key electrical parameters include a minimum DC current gain (hFE) of 200 at 2 mA and 5 V, a transition frequency of 300 MHz, and a maximum power dissipation of 500 mW.

Single Bipolar Transistors Feature Summary

  • Single NPN silicon construction for general-purpose amplification
  • High DC current gain classification for signal processing
  • Through-hole mounting compatibility via TO-92-3 package

Single Bipolar Transistors Applications

  • General-purpose amplifier circuits
  • Switching applications requiring low to moderate current control
  • Audio signal processing stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'B' corresponds to the required hFE binning level, as variants like BC547CTA differ significantly in gain specifications. Confirm the tape-and-reel packaging format matches automated assembly requirements. Cross-reference the manufacturer part number with official onsemi documentation to ensure component authenticity and compliance with RoHS standards before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a high-gain NPN transistor is required for small-signal applications. The BC547BTFR offers a guaranteed minimum hFE of 200, distinguishing it from lower-gain variants. Ensure the circuit design accommodates the 45 V collector-emitter voltage limit and 500 mW thermal dissipation constraints within the TO-92-3 package footprint.

Single Bipolar Transistors Part Context

This component belongs to the BC547 series of NPN silicon transistors produced by onsemi. The series includes variants such as BC547A, BC547B, and BC547C, which are differentiated primarily by their DC current gain ranges. The BC547BTFR specifically denotes the B-grade gain binning packaged in a tape-and-reel format for efficient surface or through-hole integration.

Single Bipolar Transistors Replacement Considerations

  • BC547BTA
  • BC547BU

Single Bipolar Transistors FAQ

What is the minimum DC current gain for the BC547BTFR?

The minimum DC current gain (hFE) is 200, measured at a collector current of 2 mA and a collector-emitter voltage of 5 V.

What is the maximum power dissipation rating?

The maximum power dissipation is 500 mW.

Is the BC547BTFR available in a lead-free package?

Yes, onsemi offers Pb-Free packages for this component family.

BC547BTFRBC547BTFR
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