Single Bipolar Transistors BC547C A1G product image

BC547C A1G

  • Description:TRANS NPN 45V 0.1A TO-92
  • Series:-

SKU:5299b5ebe07e Category: Brand:

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BC547C A1G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is TRANS NPN 45V 0.1A TO-92. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC547C A1G

  • Description:TRANS NPN 45V 0.1A TO-92
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tape & Box (TB)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
  • Power - Max:500 mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BC547C A1G

BC547C A1G

Single Bipolar Transistors Overview

The BC547C A1G is an NPN general-purpose bipolar junction transistor manufactured by Taiwan Semiconductor Corporation. It utilizes silicon technology and is housed in a TO-92-3 through-hole package. The device supports a maximum collector current of 100 mA and features a collector-emitter voltage rating of 65 V, with a collector-base voltage of 80 V and an emitter-base voltage of 6 V. It offers a minimum DC current gain (hFE) of 220 at 2 mA and 5 V. The component operates within a temperature range of -65°C to 150°C and has a maximum power dissipation of 500 mW.

Single Bipolar Transistors Feature Summary

  • NPN silicon construction for general-purpose switching and amplification
  • High DC current gain classification for signal processing applications
  • Glass passivated chip junction for enhanced reliability

Single Bipolar Transistors Applications

  • General purpose switching circuits
  • Signal amplification stages
  • Low voltage electronic designs

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer designation as Taiwan Semiconductor Corporation against standard industry listings, as this part number is frequently associated with other manufacturers like NXP or onsemi. Confirm RoHS compliance status and check for End-of-Life notifications, as availability may be limited. Ensure the ordering suffix matches the required binning specifications for current gain.

Single Bipolar Transistors Selection Notes

Select this component when a high-gain NPN transistor is required for low-power applications. The TO-92 package facilitates easy through-hole integration into printed circuit boards. Consider the 65 V collector-emitter voltage limit for circuit design constraints. Verify that the 100 mA continuous current rating meets the load requirements of the intended application.

Single Bipolar Transistors Part Context

This component belongs to the BC5xx series of small-signal transistors. It serves as the NPN counterpart to the PNP BC557. The 'C' suffix typically denotes a specific binning range for higher current gain compared to 'A' or 'B' variants. The 'A1G' suffix indicates specific packaging and marking details defined by the manufacturer.

Single Bipolar Transistors Replacement Considerations

  • BC547C
  • BC548C
  • 2N3904

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the BC547C A1G?

The maximum collector-emitter voltage (VCEO) is 65 V.

Is the BC547C A1G available in a surface-mount package?

No, the BC547C A1G is specified for through-hole installation in a TO-92-3 package.

What is the minimum DC current gain (hFE) for this component?

The minimum DC current gain is 220 when measured at a collector current of 2 mA and a collector-emitter voltage of 5 V.

BC547C A1GBC547C A1G

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