BC547CTA

Single Bipolar Transistors Overview

The BC547CTA is an NPN epitaxial silicon transistor manufactured by onsemi, housed in a TO-92-3 Ammo package. It features a collector-emitter voltage (VCEO) of 45 V and a maximum DC collector current of 100 mA. The device belongs to the 'C' gain classification, providing a minimum DC current gain (hFE) of 420 at IC = 2 mA and VCE = 5 V. Key electrical characteristics include a collector-base voltage (VCBO) of 50 V, emitter-base voltage (VEBO) of 6 V, and a power dissipation rating of 500 mW. The transition frequency (fT) is specified at 300 MHz.

Single Bipolar Transistors Feature Summary

• Designed for general-purpose switching and amplifier applications
• Epitaxial silicon construction with high-voltage capability
• High DC current gain suitable for sensitive signal processing

Single Bipolar Transistors Applications

• General-purpose amplification circuits
• Electronic switching applications
• Complementary pairing with PNP transistors such as the BC556 series

Single Bipolar Transistors Procurement Notes

Verify that the ordering suffix matches the required packing method, as the 'TA' suffix specifically denotes the TO-92 3L Ammo packaging format. Confirm the 'C' gain bin requirement aligns with circuit design specifications, as this variant provides significantly higher hFE compared to standard A or B classifications. Ensure compatibility with through-hole assembly processes given the kinked lead configuration typical of this package style.

Single Bipolar Transistors Selection Notes

Select the BC547CTA when high current gain is critical for low-level signal amplification tasks. The 'C' classification ensures a minimum hFE of 420, distinguishing it from lower-gain variants. Consider the TO-92-3 Ammo package if automated component placement equipment compatible with this specific tape-and-reel or ammo box format is utilized in the manufacturing workflow.

Single Bipolar Transistors Part Context

This component is part of the broader BC546/BC547/BC548/BC549/BC550 family of NPN epitaxial silicon transistors originally developed by Fairchild Semiconductor and now managed by onsemi following corporate integration. The BC547 variant specifically offers a 45 V collector-emitter breakdown voltage, positioning it between the higher-voltage BC546 and the lower-voltage BC548 within the product lineup.

Single Bipolar Transistors Replacement Considerations

• BC547CTFR

Single Bipolar Transistors FAQ

What does the 'C' designation indicate in the BC547CTA part number?

The 'C' indicates the DC current gain (hFE) classification. For the BC547CTA, this corresponds to a minimum hFE of 420 at IC = 2 mA and VCE = 5 V.

How does the BC547 differ from the BC546 and BC548 regarding voltage ratings?

The BC547 has a collector-emitter voltage (VCEO) of 45 V. This is lower than the BC546 (65 V) but higher than the BC548 (30 V).

Is the BC547CTA suitable for use in life support systems?

No. ON Semiconductor explicitly states that these products are not designed, intended, or authorized for use as critical components in life support systems or medical devices.