BC548C

Single Bipolar Transistors Overview

The BC548C is an NPN silicon planar epitaxial transistor manufactured by Diotec Semiconductor, housed in a TO-92 through-hole package. It features a collector-emitter breakdown voltage of 30 V and a maximum continuous collector current of 100 mA. The device offers a minimum DC current gain (hFE) of 420 at 2 mA and 5 V, with a transition frequency of 300 MHz. Power dissipation is rated at 500 mW, and the junction temperature range spans from -55°C to 150°C.

Single Bipolar Transistors Feature Summary

• High DC current gain for sensitive amplification applications
• Fast switching capability with high transition frequency
• Robust thermal performance across extended temperature ranges

Single Bipolar Transistors Applications

• General purpose signal amplification
• Switching circuits
• RF small signal processing

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer lot and RoHS compliance status against the latest datasheet before integration. Confirm that the TO-92 package variant matches your PCB footprint requirements. Ensure the hFE binning aligns with circuit design tolerances, as gain varies significantly within the C suffix specification.

Single Bipolar Transistors Selection Notes

Select this component when high current gain is required for low-level signal amplification. The 30 V rating suits low-voltage logic interfaces. Compare against BC548B or BC548A if lower gain thresholds are acceptable for cost optimization. Verify thermal management needs for continuous operation near the 500 mW limit.

Single Bipolar Transistors Part Context

This part belongs to the BC546/BC547/BC548 series of NPN general-purpose transistors. The 'C' suffix denotes the highest gain bin within this family. It serves as the complementary counterpart to PNP devices like the BC558C in push-pull configurations.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include BC548B and BC549B from Diotec Semiconductor, which share identical pinouts and mechanical dimensions but differ in current gain specifications.