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BC549_J35Z is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 30V 0.1A TO-92-3. Review the specifications below when checking this part for your BOM.
The BC549_J35Z is an NPN silicon epitaxial planar transistor manufactured by onsemi, housed in a TO-92 (SOT54) plastic package. It is designed for general-purpose switching and amplification applications. Key electrical characteristics include a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 45 V. The device features low noise performance, making it suitable for audio frequency stages. It operates within a junction temperature range of -55°C to +150°C and has a maximum power dissipation of 500 mW.
Verify the manufacturer marking matches onsemi specifications. Confirm the suffix J35Z corresponds to the correct tape and reel or bulk packaging variant as defined in the official datasheet. Ensure the component meets RoHS compliance requirements if specified for the project. Cross-reference the date code and lot number against the supplier's certificate of analysis to confirm authenticity and traceability.
Select this component when low noise performance is critical in NPN amplification tasks. Compare hFE gain bands with other BC549 variants to match circuit sensitivity requirements. Verify that the TO-92 package dimensions fit the PCB layout constraints. Consider thermal management needs given the 500 mW power dissipation limit in enclosed environments.
This part belongs to the BC549 family of NPN general-purpose transistors. It serves as a complement to PNP devices like the BC559. The series is widely used in analog circuits requiring stable operation and low distortion. The J35Z suffix typically denotes specific packaging or testing criteria defined by onsemi for this particular orderable part number.
The maximum collector-emitter breakdown voltage (V(BR)CEO) is 45 V.
It is primarily designed for low-noise audio frequency applications rather than high-frequency RF switching.
The device supports a junction temperature range from -55°C to +150°C.
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