BC549A B1G

Description：TRANS NPN 30V 0.1A TO-92
Series：-

SKU:e4ce819b8737 Category: Single Bipolar Transistors Brand: Taiwan Semiconductor Corporation

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Product introduction

BC549A B1G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is TRANS NPN 30V 0.1A TO-92. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC549A B1G

Description：TRANS NPN 30V 0.1A TO-92
Series：-
Mfr：Taiwan Semiconductor Corporation
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：30 V
Vce Saturation (Max) @ Ib, Ic：-
Current - Collector Cutoff (Max)：15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：110 @ 2mA, 5V
Power - Max：500 mW
Frequency - Transition：-
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for BC549A B1G

BC549A B1G

Single Bipolar Transistors Overview

The BC549A B1G is an NPN silicon small-signal bipolar junction transistor manufactured by Taiwan Semiconductor Corporation. It features a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 30 V. The device provides a minimum DC current gain (hFE) of 110 at 2 mA and 5 V. Maximum power dissipation is rated at 500 mW, with a collector-base cutoff current of 15 nA. Operating temperature ranges from -65°C to 150°C. It utilizes a TO-92 through-hole package.

Single Bipolar Transistors Feature Summary

NPN epitaxial silicon planar design for general-purpose switching and amplification
High DC current gain ensuring stable signal processing performance
Robust thermal stability supporting operation across extended temperature ranges

Single Bipolar Transistors Applications

General-purpose signal amplification circuits
Electronic switching applications
Audio pre-amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'B1G' against official Taiwan Semiconductor documentation to confirm packaging configuration and compliance status. Ensure the component matches the required hFE binning specifications for the intended circuit design. Cross-reference datasheet revisions to confirm material composition and environmental compliance requirements prior to procurement.

Single Bipolar Transistors Selection Notes

Select this component when a low-voltage NPN transistor with moderate current handling is required. The 30 V rating suits low-power logic interfacing. Compare hFE minimums against circuit biasing needs. Consider the TO-92 package constraints for thermal management in high-density layouts. Verify availability against obsolete alternatives if sourcing from secondary markets.

Single Bipolar Transistors Part Context

This part belongs to the BC549 series of NPN transistors, widely used in consumer electronics and industrial control systems. It serves as a standard replacement for legacy general-purpose NPN devices. The series offers complementary PNP variants for push-pull configurations. Manufacturing focuses on cost-effective mass production while maintaining consistent electrical characteristics across batches.