BC549C A1G

Single Bipolar Transistors Overview

The BC549C A1G is an NPN silicon small-signal bipolar junction transistor manufactured by Taiwan Semiconductor Corporation. It features a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 30 V. The device offers a minimum DC current gain (hFE) of 420 at 2 mA and 5 V, with a maximum power dissipation of 500 mW. It operates within a temperature range of -65°C to +150°C and is housed in a TO-92 through-hole package.

Single Bipolar Transistors Feature Summary

• High DC current gain for signal amplification
• Low noise characteristics suitable for audio applications
• Robust thermal performance with high junction temperature rating

Single Bipolar Transistors Applications

• Low noise stages in audio frequency equipment
• General purpose switching circuits
• Small signal amplification tasks

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'A1G' against official Taiwan Semiconductor documentation to confirm packaging type and compliance status. Confirm availability as distribution data may vary. Ensure the component meets RoHS requirements for your specific application needs before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when a high-gain NPN transistor is required for low-noise audio or general-purpose amplification. The TO-92 package suits through-hole designs. Compare hFE ranges with other variants like BC549A or B if lower gain is acceptable for cost reduction.

Single Bipolar Transistors Part Context

This part belongs to the BC5xx series of NPN transistors, widely used in consumer electronics. It serves as a complement to PNP devices such as the BC559. The 'C' designation indicates a higher current gain bin compared to 'A' or 'B' variants, making it ideal for sensitive analog circuits.

Single Bipolar Transistors Replacement Considerations

Compatible substitutes include BC549C from other manufacturers such as NXP or Diotec. Verify pinout compatibility and electrical parameter equivalence, particularly hFE and VCEO ratings, before substitution.