BC549C B1G

Description：TRANS NPN 30V 0.1A TO-92
Series：-

SKU:ce7ab67fb000 Category: Single Bipolar Transistors Brand: Taiwan Semiconductor Corporation

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Product introduction

BC549C B1G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is TRANS NPN 30V 0.1A TO-92. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC549C B1G

Description：TRANS NPN 30V 0.1A TO-92
Series：-
Mfr：Taiwan Semiconductor Corporation
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：30 V
Vce Saturation (Max) @ Ib, Ic：-
Current - Collector Cutoff (Max)：15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
Power - Max：500 mW
Frequency - Transition：-
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for BC549C B1G

BC549C B1G

Single Bipolar Transistors Overview

The BC549C B1G is an NPN silicon epitaxial planar bipolar junction transistor manufactured by Taiwan Semiconductor Corporation. It is housed in a TO-92 (TO-226AA) through-hole package with three leads. The device supports a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 30 V. Key electrical parameters include a collector-base voltage of 30 V, an emitter-base voltage of 6 V, and a total power dissipation of 500 mW. The DC current gain (hFE) minimum is specified at 200 under test conditions of 2 mA collector current and 5 V collector-emitter voltage. The component operates within a junction temperature range of -65°C to +150°C.

Single Bipolar Transistors Feature Summary

Utilizes NPN silicon epitaxial planar technology for stable switching and amplification performance.
Features low collector cutoff current to minimize leakage effects in high-impedance circuits.
Designed for general-purpose applications requiring reliable signal processing and amplification.

Single Bipolar Transistors Applications

Low noise stages in audio frequency equipment
General purpose amplifiers
Switching circuits

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'B1G' against the manufacturer's official datasheet to confirm lead forming or marking variations. Confirm RoHS compliance status directly from the product documentation. Ensure the ordering quantity aligns with the manufacturer's standard packaging specifications. Cross-reference the part number with authorized distributors to validate authenticity and supply chain integrity before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when a 30 V NPN transistor with a minimum hFE of 200 is required. The TO-92 package suits prototyping and low-volume production. Compare the 500 mW power dissipation limit against thermal requirements. Verify that the 100 mA continuous collector current meets the load demands. Consider complementary PNP devices like the BC559 if push-pull configurations are needed.

Single Bipolar Transistors Part Context

This component belongs to the BC549 series of NPN general-purpose transistors. It shares the same physical footprint as the BC548 and BC547 variants but differs in current gain classification. The 'C' suffix typically denotes the highest gain bin within the series. The 'B1G' suffix indicates specific manufacturing or packaging details defined by Taiwan Semiconductor. This series is widely used in consumer electronics and industrial control systems.