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BC550ABU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 45V 0.1A TO-92-3. Review the specifications below when checking this part for your BOM.
The onsemi BC550ABU is a discontinued NPN epitaxial silicon transistor from the BC546-BC550 series, housed in a TO-92-3 through-hole package. It features a maximum collector-emitter voltage of 45V and a continuous collector current of 100mA with a power dissipation rating of 500mW. The device offers a transition frequency of 300MHz and a minimum DC current gain (hFE) of 110 at 2mA and 5V. It supports a junction temperature up to 150°C and includes a collector-base breakdown voltage of 50V.
Verify component status as the BC550ABU is officially obsolete and no longer manufactured by onsemi. Confirm availability of alternative sources or compatible substitutes such as the Central Semiconductor Corp 2N5232A PBFREE before finalizing design specifications. Ensure replacement parts meet identical electrical ratings and physical footprint requirements.
Select this component only if legacy compatibility is required or if specific historical design constraints mandate the BC550ABU variant. Evaluate the trade-off between obsolescence risks and the need for its specific 300MHz transition frequency and low-noise profile compared to standard general-purpose alternatives.
The BC550ABU belongs to the broader BC546-BC550 family of NPN epitaxial silicon transistors produced by onsemi. This series is characterized by complementary devices in the BC556-BC560 PNP lineup. The ABU suffix typically denotes specific binning for current gain and other electrical parameters within the standard TO-92 package form factor.
Public confirmed substitute part number: 2N5232A PBFREE (Central Semiconductor Corp). Verify pinout compatibility and electrical parameter equivalence prior to implementation.
The maximum collector-emitter voltage (VCEO) is 45V.
No, the BC550ABU is classified as obsolete and is no longer manufactured by onsemi.
The transition frequency (fT) is specified as 300MHz.
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