BC550B A1G

Single Bipolar Transistors Overview

The BC550B A1G is an NPN epitaxial silicon transistor manufactured by Taiwan Semiconductor Corporation. It features a collector-emitter breakdown voltage of 45 V and a maximum continuous collector current of 100 mA. The device has a maximum power dissipation of 500 mW and operates within a junction temperature range of -65°C to +150°C. The minimum DC current gain (hFE) is specified as 200 at a collector current of 2 mA and a collector-emitter voltage of 5 V. It utilizes a TO-92 through-hole package.

Single Bipolar Transistors Feature Summary

• NPN epitaxial silicon construction for reliable switching and amplification
• Low-noise performance suitable for sensitive signal processing circuits
• High DC current gain classification for efficient base drive requirements

Single Bipolar Transistors Applications

• General-purpose amplifier stages
• Electronic switching circuits
• Signal conditioning modules

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'A1G' against the manufacturer's official datasheet to confirm the hFE binning grade, as suffixes often denote gain ranges. Confirm RoHS compliance status with the supplier, as older production runs may differ from current specifications. Ensure the TO-92 package dimensions match the target PCB footprint before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when a low-noise NPN transistor with moderate voltage ratings is required. The BC550B variant offers higher current gain than the standard BC550C, making it suitable for applications demanding greater amplification efficiency. Consider thermal management if operating near the maximum power dissipation limit in enclosed environments.

Single Bipolar Transistors Part Context

The BC550 series belongs to a family of general-purpose NPN transistors widely used in consumer electronics and industrial control. This series is complementary to the PNP BC560 series, facilitating push-pull output stage designs. The BC550B specifically denotes a binning category focused on higher current gain characteristics compared to other variants in the same voltage class.

Single Bipolar Transistors Replacement Considerations

• BC550C A1G
• BC550CTA
• BC550CTFR

Single Bipolar Transistors FAQ

What is the minimum DC current gain for the BC550B?

The minimum DC current gain (hFE) for the BC550B is 200, measured at a collector current of 2 mA and a collector-emitter voltage of 5 V.

Is the BC550B A1G a low-noise transistor?

Yes, the BC550 series is characterized as a low-noise transistor, making it suitable for audio and RF amplifier applications where signal integrity is critical.

What is the maximum collector-emitter voltage?

The maximum collector-emitter breakdown voltage (VCEO) for the BC550B is 45 V.