Single Bipolar Transistors BC556_J18Z product image

BC556_J18Z

$0.04
  • Description:TRANS PNP 65V 0.1A TO-92-3
  • Series:-

SKU:7e4d1358be0a Category: Brand:

  
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BC556_J18Z is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 65V 0.1A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC556_J18Z

  • Description:TRANS PNP 65V 0.1A TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):65 V
  • Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:110 @ 2mA, 5V
  • Power - Max:500 mW
  • Frequency - Transition:150MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3

Single Bipolar Transistors datasheet and documents for BC556_J18Z

BC556_J18Z

Single Bipolar Transistors Overview

The BC556_J18Z is a PNP silicon epitaxial planar transistor manufactured by onsemi, designed for switching and audio frequency amplifier applications. It features a collector-emitter voltage of 65 V and a continuous collector current of 100 mA. The device offers a DC current gain (hFE) range of 180 to 460, with a transition frequency of 280 MHz. Power dissipation is rated at 625 mW in a TO-92-3 through-hole package. Operating temperatures span from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

  • PNP silicon epitaxial planar construction optimized for general-purpose switching and audio frequency amplification tasks.
  • High DC current gain classification providing consistent signal amplification performance across operating conditions.
  • Robust thermal stability supporting operation within an extended junction temperature range up to 150°C.

Single Bipolar Transistors Applications

  • Audio frequency pre-amplifier stages
  • General-purpose signal switching circuits
  • Driver stages for power transistors

Single Bipolar Transistors Procurement Notes

Verify the specific J18Z suffix against the official onsemi datasheet to confirm packaging or binning variations. Confirm RoHS compliance status as historical data indicates potential non-compliance for older batches. Validate component authenticity through authorized distribution channels due to discontinued status.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with moderate gain and 65V breakdown is required for low-power analog or switching roles. Ensure the TO-92 footprint matches the PCB layout. Consider the hFE binning requirements for linear applications to maintain circuit consistency.

Single Bipolar Transistors Part Context

This part belongs to the BC556 series of PNP general-purpose transistors. It is functionally complementary to the NPN BC557 and shares similar electrical characteristics with other members of the family, differentiated primarily by gain grouping and packaging suffixes.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitutes include BC556BTA and BC556BTF from onsemi. Verify pinout compatibility and thermal resistance specifications before implementation.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the BC556_J18Z?

The maximum collector-emitter voltage (VCEO) is 65 V.

Is the BC556_J18Z suitable for high-frequency RF applications?

No, it is designed for audio frequency and general-purpose switching, with a transition frequency of 280 MHz.

What is the typical package type for this component?

It is housed in a TO-92-3 (TO-226AA) plastic through-hole package.

BC556_J18ZBC556_J18Z
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