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BC556ABU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 65V 0.1A TO-92-3. Review the specifications below when checking this part for your BOM.
The onsemi BC556ABU is a PNP bipolar junction transistor (BJT) housed in a surface-mount SOT-23 package. It features a collector-emitter voltage rating of -45V and a continuous collector current of -100mA. The device offers a high DC current gain (hFE) range of 110 to 220, ensuring consistent amplification performance. It operates with a maximum power dissipation of 350mW at 25°C ambient temperature and supports junction temperatures up to 150°C.
Verify the component authenticity by checking the marking code and date code against official onsemi documentation. Ensure the SOT-23 package variant matches the specific AB binning requirements for current gain specifications. Confirm that the supplier provides traceability to the original manufacturer to avoid counterfeit components in critical designs.
Select this component when a PNP transistor with moderate current handling and high gain is required in a small footprint. Compare the hFE binning against circuit requirements to ensure adequate margin. Consider the SOT-23 thermal characteristics and ensure sufficient PCB copper area for heat dissipation during continuous operation.
This part belongs to the BC556 series of PNP transistors designed for general-purpose use. The 'AB' suffix indicates a specific current gain binning range provided by onsemi. It serves as a standard replacement for legacy discrete PNP devices in consumer and industrial electronics where space constraints necessitate surface-mount technology.
Compatible substitutes include the BC556B from other manufacturers, provided the hFE range aligns with the AB specification. Verify pinout compatibility and thermal resistance values before substitution to maintain circuit performance integrity.
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