BC556BBU

Single Bipolar Transistors Overview

The Fairchild Semiconductor BC556BBU is a PNP epitaxial silicon transistor housed in a TO-92 plastic package. It features a maximum collector-emitter voltage of 65 V and a continuous collector current of 100 mA. The device offers a DC current gain (hFE) range of 200 to 450, with a transition frequency of 100 MHz and power dissipation of 625 mW at 25°C ambient temperature.

Single Bipolar Transistors Feature Summary

• Epitaxial silicon construction for stable switching performance
• High DC current gain suitable for amplifier applications
• Low noise characteristics optimized for audio signal processing

Single Bipolar Transistors Applications

• General purpose switching circuits
• Audio frequency amplification stages
• Complementary pairing with NPN transistors

Single Bipolar Transistors Procurement Notes

Verify the manufacturer marking on the component body against official datasheets to confirm authenticity. Check for lead-free compliance markings if RoHS standards are required. Ensure the TO-92 package dimensions match your PCB footprint requirements before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with moderate voltage ratings and high current gain is needed. It serves as a direct complement to the BC557 series. Consider thermal management for power dissipation limits above 25°C ambient conditions.

Single Bipolar Transistors Part Context

This part belongs to the BC550/BC560 family of general-purpose PNP transistors. It shares pinouts and mechanical dimensions with other variants in the series, differing primarily in current gain grouping and specific electrical parameters defined by the manufacturer's binning process.

Single Bipolar Transistors Replacement Considerations

Compatible substitutes include the BC557B and BC558B from various manufacturers. Verify that replacement parts maintain the same TO-92 package and meet or exceed the 65V VCEO rating.