Single Bipolar Transistors BC556BTF product image

BC556BTF

$0.22
  • Description:TRANS PNP 65V 0.1A TO-92-3
  • Series:-

SKU:9e01a831fab1 Category: Brand:

  
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BC556BTF is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 65V 0.1A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC556BTF

  • Description:TRANS PNP 65V 0.1A TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):65 V
  • Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:500 mW
  • Frequency - Transition:150MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BC556BTF

BC556BTF

Single Bipolar Transistors Overview

The BC556BTF is a PNP silicon epitaxial planar transistor manufactured by onsemi, designed for switching and audio frequency amplifier applications. It features a maximum collector current of 100 mA and a collector-emitter voltage rating of 65 V. The device operates within a junction temperature range of -55°C to +150°C and dissipates up to 500 mW of power. Key electrical characteristics include a minimum DC current gain (hFE) of 200 at 2 mA and 5 V, a transition frequency (fT) of 150 MHz, and a collector-base voltage of 80 V.

Single Bipolar Transistors Feature Summary

  • Epitaxial PNP silicon construction optimized for low-noise audio amplification
  • High DC current gain classification ensuring consistent performance in signal processing
  • Robust thermal stability supporting operation at elevated junction temperatures

Single Bipolar Transistors Applications

  • Audio frequency pre-amplifier stages
  • General-purpose switching circuits
  • Driver stages for output transistors

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'B' to confirm the hFE binning class required for your circuit design. Confirm the TO-92-3 kinked lead package style matches your PCB footprint requirements. Check the latest datasheet for RoHS compliance status and any recent product change notices regarding manufacturing origin or material composition updates.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with moderate voltage ratings and high current gain is needed for small-signal applications. Compare the 150 MHz transition frequency against higher-speed alternatives if operating near RF limits. Ensure the 500 mW power dissipation capability aligns with the thermal management strategy of the target enclosure.

Single Bipolar Transistors Part Context

This part belongs to the BC556 series of general-purpose PNP transistors. It shares the same physical package and basic electrical structure as variants like BC556BTFR but differs in packaging format. The 'B' designation indicates a specific current gain grouping, distinguishing it from 'A' or 'C' bins within the same family.

Single Bipolar Transistors Replacement Considerations

BC556BTA serves as a parameter-equivalent alternative in an Ammo Pack. BC556BTFR is another compatible option available in Reel packaging. Verify that the replacement maintains the same hFE binning and voltage ratings for direct substitution.

BC556BTFBC556BTF
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