BC556CBU

Single Bipolar Transistors Overview

The BC556CBU is a PNP epitaxial silicon transistor designed for switching and amplifier applications. It features a collector-emitter breakdown voltage of 45V and a maximum continuous collector current of 100mA. The device utilizes a TO-92 through-hole package with a power dissipation rating of 500mW. The 'C' suffix indicates a high DC current gain (hFE) range, typically 420 to 800, ensuring consistent performance in low-current amplification circuits.

Single Bipolar Transistors Feature Summary

• Epitaxial silicon construction optimized for general-purpose switching and audio frequency amplification
• High DC current gain grouping provides predictable biasing characteristics for analog signal processing
• Robust thermal stability supporting operation across extended industrial temperature ranges

Single Bipolar Transistors Applications

• General-purpose signal amplification in audio pre-amplifier stages
• Low-power electronic switching circuits requiring moderate voltage handling
• Complementary pairing with NPN transistors in push-pull output configurations

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer source, as Fairchild Semiconductor assets are now managed by onsemi. Confirm RoHS compliance status and lead times directly with authorized distributors, noting that availability may vary based on production lifecycle status and regional supply constraints.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a 45V collector-emitter voltage rating and high current gain is required. Ensure the application current remains within the 100mA limit and verify that the TO-92 package fits the mechanical design constraints. Compare hFE specifications against circuit requirements to ensure adequate amplification factors.

Single Bipolar Transistors Part Context

This part belongs to the BC55x series of PNP transistors, which includes variants like BC556A, BC556B, and BC557. These components share similar electrical structures but differ primarily in their DC current gain groupings. The BC556CBU specifically targets applications demanding higher gain consistency compared to lower-gain variants in the same family.

Single Bipolar Transistors Replacement Considerations

• BC556C
• BC557C
• BC560C

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the BC556CBU?

The maximum collector-emitter breakdown voltage (VCEO) is 45V.

Does the BC556CBU support surface mount mounting?

No, the BC556CBU is housed in a TO-92 package designed for through-hole mounting.

What does the 'C' suffix indicate regarding current gain?

The 'C' suffix denotes a high DC current gain (hFE) grouping, typically ranging from 420 to 800, offering tighter gain tolerances than 'A' or 'B' variants.