Single Bipolar Transistors BC557 product image

BC557

  • Description:TRANS PNP 45V 0.1A TO-92-3
  • Series:-

SKU:08261b031f43 Category: Brand:

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BC557 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 45V 0.1A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC557

  • Description:TRANS PNP 45V 0.1A TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:110 @ 2mA, 5V
  • Power - Max:500 mW
  • Frequency - Transition:150MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3

Single Bipolar Transistors datasheet and documents for BC557

BC557

Single Bipolar Transistors Overview

The onsemi BC557 is a PNP silicon bipolar junction transistor (BJT) designed for general-purpose small-signal applications. It operates with a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 45 V. The device features a transition frequency of 150 MHz and a power dissipation rating of 500 mW. It is housed in a TO-92-3 through-hole package, suitable for standard lead-forming processes. The component supports a maximum operating temperature of +150°C and includes an emitter-base voltage limit of 5 V.

Single Bipolar Transistors Feature Summary

  • PNP polarity configuration for complementary switching and amplification circuits
  • High-frequency performance capability up to 150 MHz transition frequency
  • Robust thermal handling with a maximum junction temperature of 150°C

Single Bipolar Transistors Applications

  • General-purpose small-signal amplification
  • Complementary pairs with NPN transistors
  • Switching applications requiring low current control

Single Bipolar Transistors Procurement Notes

Verify the specific suffix code (e.g., A, B, C) as it determines the DC current gain binning. Confirm RoHS compliance status via the manufacturer's official documentation. Check for End-of-Life notices or Production Change Notifications regarding availability. Ensure the package type matches the required PCB footprint specifications.

Single Bipolar Transistors Selection Notes

Select based on the required hFE range; different suffixes offer varying gain levels. Verify that the 100 mA collector current meets the load requirements. Ensure the TO-92-3 package fits the mechanical constraints. Consider the 500 mW power dissipation limit under actual operating conditions.

Single Bipolar Transistors Part Context

The BC557 belongs to a widely used family of PNP small-signal transistors. It is commonly paired with the BC547 NPN transistor in complementary configurations. The series is known for reliability in consumer electronics and industrial control systems. Variants exist with different gain classifications to suit precise circuit design needs.

Single Bipolar Transistors Replacement Considerations

  • BC557A
  • BC557B
  • BC557C

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage?

The maximum collector-emitter breakdown voltage (VCEO) is 45 V.

Does the BC557 support surface mount mounting?

No, the standard BC557 is a through-hole device packaged in TO-92-3.

What is the maximum power dissipation?

The maximum power dissipation (Pd) is 500 mW.

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