BC558_J35Z

Single Bipolar Transistors Overview

The BC558_J35Z is a PNP silicon epitaxial planar transistor manufactured by onsemi, designed for switching and amplifier applications. It features a maximum collector-emitter voltage of -30V and a continuous collector current of 100mA. The device operates within a junction temperature range of -55°C to +150°C and dissipates up to 500mW of power. It utilizes the TO-92 (TO-226AA) through-hole package with three pins.

Single Bipolar Transistors Feature Summary

• PNP polarity configuration suitable for general-purpose amplification
• Epitaxial planar silicon construction for reliability
• Through-hole mounting capability via standard leaded package

Single Bipolar Transistors Applications

• General purpose small signal amplification
• Low frequency switching circuits
• Audio pre-amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix J35Z against the manufacturer's official datasheet to confirm pinout orientation and gain banding specifications. Ensure the component matches the required RoHS compliance status for the target assembly process. Cross-reference the ordering code with onsemi documentation to validate availability and manufacturing origin details.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with moderate voltage handling and low noise characteristics is required. Compare the DC current gain (hFE) ranges against circuit requirements to ensure adequate amplification factors. Consider thermal management constraints given the 500mW power dissipation limit in the TO-92 package.

Single Bipolar Transistors Part Context

This part belongs to the BC558 series of PNP transistors, which are widely used in consumer electronics and industrial control systems. The series offers complementary pairing options with NPN counterparts like the BC548. The J35Z suffix typically denotes specific packaging or binning criteria defined by onsemi for quality control and supply chain logistics.