BC558BTA

Single Bipolar Transistors Overview

The BC558BTA is a PNP epitaxial silicon transistor manufactured by onsemi. It features a maximum collector-emitter voltage (VCEO) of -30 V and a maximum collector-base voltage (VCBO) of -30 V. The device supports a continuous DC collector current (IC) of -100 mA and a peak pulse collector current (ICP) of -200 mA. Total power dissipation (PD) is rated at 500 mW, with a junction-to-ambient thermal resistance (RθJA) of 250 °C/W. The minimum DC current gain (hFE) for the 'B' classification is 110 at IC = -2 mA and VCE = -5 V. The transition frequency (fT) is 150 MHz. Operating temperature ranges from -65 °C to +150 °C.

Single Bipolar Transistors Feature Summary

• PNP epitaxial silicon construction designed for switching and amplifier applications
• High-voltage capability with a -30 V collector-emitter breakdown rating
• Low noise figure suitable for sensitive signal processing circuits
• Direct complement to the BC548 NPN transistor family

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Linear amplifier stages
• Complementary pairs with BC548 transistors

Single Bipolar Transistors Procurement Notes

Verify the manufacturer source carefully, as this component was originally produced by Fairchild Semiconductor before integration into ON Semiconductor. Confirm that the ordering suffix matches the required packing method, such as Ammo or Tape and Reel, as specified in the official documentation. Ensure compliance with authorized use policies regarding automotive, military, or life-critical medical applications.

Single Bipolar Transistors Selection Notes

Select the BC558BTA when a -30 V PNP transistor is required for low-noise amplification or general switching tasks. The 'B' hFE classification provides a minimum gain of 110, offering moderate amplification capabilities. Consider the complementary BC548BTA for matched NPN/PNP pairs in push-pull configurations. Evaluate thermal derating requirements if operating above 25°C ambient temperature.

Single Bipolar Transistors Part Context

This component belongs to the BC556/BC557/BC558/BC559/BC560 series of PNP epitaxial silicon transistors. The series differentiates devices primarily by voltage ratings and noise characteristics. The BC558 variant specifically targets the -30 V range, bridging the gap between lower voltage and higher voltage options like the BC557 (-45 V) and BC556 (-65 V).

Single Bipolar Transistors Replacement Considerations

BC558BTAR

Single Bipolar Transistors FAQ

What is the difference between the BC558BTA and BC558BTFR?

The primary difference lies in the packing method. The BC558BTA uses Ammo packing, while the BC558BTFR utilizes Tape and Reel packaging.

Is the BC558BTA suitable for high-frequency applications?

Yes, it has a transition frequency (fT) of 150 MHz, making it suitable for standard RF and audio frequency applications.

What is the minimum DC current gain for the BC558BTA?

For the 'B' classification, the minimum DC current gain (hFE) is 110 when measured at IC = -2 mA and VCE = -5 V.