Single Bipolar Transistors BC558BTF product image

BC558BTF

$0.03
  • Description:TRANS PNP 30V 0.1A TO-92-3
  • Series:-

SKU:84c122b16f29 Category: Brand:

  
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BC558BTF is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 30V 0.1A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC558BTF

  • Description:TRANS PNP 30V 0.1A TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:500 mW
  • Frequency - Transition:150MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92-3

Single Bipolar Transistors datasheet and documents for BC558BTF

BC558BTF

Single Bipolar Transistors Overview

The BC558BTF is a PNP silicon epitaxial planar transistor manufactured by onsemi, housed in the compact SOT-23 surface-mount package. It serves as a general-purpose small-signal device with a maximum collector current of 100 mA and a collector-emitter breakdown voltage (VCEO) of -30 V. The component features a DC current gain (hFE) range of 200 to 450, ensuring consistent amplification performance. Designed for low-power applications, it operates within a junction temperature range of -55°C to +150°C and supports a power dissipation of 310 mW.

Single Bipolar Transistors Feature Summary

  • Utilizes an epitaxial planar construction for reliable switching and amplification
  • Optimized for low-voltage, low-power signal processing tasks
  • Engineered for high-volume automated surface-mount assembly processes

Single Bipolar Transistors Applications

  • General-purpose amplifier circuits
  • Switching applications in consumer electronics
  • Audio pre-amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the manufacturer marking matches onsemi specifications and confirm the SOT-23 package variant aligns with design constraints. Ensure the hFE binning corresponds to the required gain tolerance for the specific circuit application. Cross-reference the ordering part number suffix to confirm tape-and-reel packaging details and RoHS compliance status before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with moderate gain and low current handling is required for space-constrained designs. The SOT-23 form factor facilitates automated placement compared to through-hole alternatives. Consider the -30 V rating for low-voltage logic interfacing and verify thermal management requirements for continuous operation near the 310 mW dissipation limit.

Single Bipolar Transistors Part Context

This device belongs to the widely adopted BC558 series of PNP transistors, which are industry-standard replacements for older discrete components. The BC558BTF specifically denotes the tape-and-reel version intended for high-speed surface-mount manufacturing lines. It complements the NPN BC548BTF in complementary pairs for push-pull configurations.

Single Bipolar Transistors Replacement Considerations

  • BC558BT1G
  • MMBT3906

Single Bipolar Transistors FAQ

What is the maximum collector current for the BC558BTF?

The maximum continuous collector current (IC) is specified as 100 mA.

Does the BC558BTF support surface-mount technology?

Yes, it is packaged in an SOT-23 case suitable for surface-mount assembly.

What is the typical DC current gain range?

The 'B' suffix indicates a DC current gain (hFE) range typically between 200 and 450 at specified test conditions.

BC558BTFBC558BTF
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