BC558CZL1

Single Bipolar Transistors Overview

The BC558CZL1 is a PNP silicon small-signal amplifier transistor manufactured by onsemi. It features a collector-emitter voltage of -30 V and continuous collector current of -100 mA. The device offers a DC current gain (hFE) ranging from 270 to 500 at IC = -10 mA, with a typical current-gain bandwidth product of 360 MHz. Packaged in a lead-free TO-92 (Case 29-11), it supports junction temperatures up to +150°C and provides low noise characteristics suitable for general-purpose amplification.

Single Bipolar Transistors Feature Summary

• High DC current gain optimized for the C series range
• Low noise performance for signal integrity
• Lead-free compliant packaging

Single Bipolar Transistors Applications

• General-purpose amplifier circuits
• Switching applications requiring low saturation voltage
• Audio pre-amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the ordering suffix ZL1 corresponds to the 2000-unit ammo box shipping configuration as specified in the official onsemi documentation. Confirm that the component is the Pb-Free variant if environmental compliance is required. Ensure the package style matches Case 29-11 dimensions for PCB footprint compatibility. Cross-reference the specific lot marking against the manufacturer's marking diagram to validate authenticity.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with high current gain (270-500) and moderate frequency response (360 MHz fT) is required. It is suitable for low-noise applications due to its specified noise figure. Consider the TO-92 package constraints for thermal dissipation, noting the derating requirements above 25°C ambient temperature. Compare against B series devices if lower gain thresholds are acceptable for cost optimization.

Single Bipolar Transistors Part Context

This part belongs to the BC55x family of PNP silicon transistors, which includes BC556, BC557, and BC558 variants differentiated primarily by breakdown voltage ratings. The BC558 specifically provides -30 V ratings for both VCEO and VCBO. The 'C' designation indicates the highest binning category for DC current gain within this series, ensuring tighter performance tolerances compared to A or B series counterparts.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other manufacturers' BC558C equivalents in TO-92 packages. Verify pinout compatibility (Collector-Base-Emitter) and ensure electrical parameters such as hFE ranges and breakdown voltages meet circuit requirements. Generic PNP small-signal transistors may serve as functional replacements if gain and speed specifications are not critical.

Single Bipolar Transistors FAQ

What is the maximum DC current gain for the BC558CZL1?

The maximum DC current gain (hFE) for the BC558C series is 500, measured at a collector current of -10 mA and VCE of -5.0 V.

Does the ZL1 suffix indicate a different electrical function than the standard BC558C?

No, the ZL1 suffix denotes the shipping configuration (Ammo Box, 2000 units) and does not alter the electrical characteristics or functionality of the device.

What is the typical current-gain bandwidth product (fT)?

The typical current-gain bandwidth product (fT) for the BC558 is 360 MHz, measured at IC = -10 mA, VCE = -5.0 V, and f = 100 MHz.