BC560BTA

Single Bipolar Transistors Overview

The BC560BTA is a discontinued PNP epitaxial silicon transistor from onsemi, housed in a TO-92-3 through-hole package. It features a maximum collector-emitter voltage of 45 V and a continuous collector current of 100 mA. The device offers a transition frequency of 150 MHz and a maximum power dissipation of 500 mW. DC current gain (hFE) is specified at a minimum of 200 when tested at 2 mA base current and 5 V collector-emitter voltage. The saturation voltage is limited to 650 mV under specific drive conditions.

Single Bipolar Transistors Feature Summary

• PNP epitaxial silicon construction for general-purpose amplification
• Low noise characteristics suitable for sensitive signal processing
• High DC current gain for efficient switching and amplification

Single Bipolar Transistors Applications

• General-purpose amplifier circuits
• Switching applications requiring low noise
• Complementary pairing with NPN transistors

Single Bipolar Transistors Procurement Notes

Verify component authenticity carefully as the BC560BTA is officially obsolete. Check datasheets for lead frame changes or specification updates documented in Product Change Notices. Confirm that replacement parts meet all electrical requirements since direct manufacturing sources are unavailable.

Single Bipolar Transistors Selection Notes

Select this component only if legacy design compatibility is required. Evaluate alternatives like the BC557BTA for active supply availability. Ensure the replacement maintains identical pinout and electrical parameters to avoid circuit redesign.

Single Bipolar Transistors Part Context

Part of the BC556-BC560 series of small-signal PNP transistors. Designed for low-noise audio and RF applications. The 'B' suffix indicates specific binning for current gain ranges. Manufactured using planar epitaxial processes for reliability.

Single Bipolar Transistors Replacement Considerations

BC557BTA is a parameter-equivalent active substitute from onsemi.