Single Bipolar Transistors BC635-16,126 product image

BC635-16,126

  • Description:TRANS NPN 45V 1A TO-92-3
  • Series:-

SKU:cbe93fe3aee1 Category: Brand:

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BC635-16,126 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is TRANS NPN 45V 1A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC635-16,126

  • Description:TRANS NPN 45V 1A TO-92-3
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Box (TB)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
  • Power - Max:830 mW
  • Frequency - Transition:180MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BC635-16,126

BC635-16,126

Single Bipolar Transistors Overview

The BC635-16,126 is a single NPN bipolar junction transistor manufactured by NXP USA Inc. It utilizes a TO-92-3 through-hole package for mounting. The device features a maximum collector-emitter breakdown voltage of 45 V and supports a continuous collector current of 1 A. Key electrical specifications include a DC current gain (hFE) minimum of 100 at 150 mA with 2 V collector-emitter voltage, and a transition frequency of 180 MHz. Power dissipation is rated at 830 mW.

Single Bipolar Transistors Feature Summary

  • NPN polarity configuration for switching and amplification applications
  • Through-hole TO-92-3 package design for standard board mounting
  • High-speed operation capability defined by specified transition frequency

Single Bipolar Transistors Applications

  • General-purpose signal amplification circuits
  • Low-power switching applications
  • Driver stages in electronic control modules

Single Bipolar Transistors Procurement Notes

Verify the specific ordering code suffix to ensure the correct binning and packaging configuration matches project requirements. Confirm that the component meets RoHS compliance standards as indicated in official documentation. Cross-reference the manufacturer part number against authorized distributor lists to validate authenticity and supply chain integrity before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a robust NPN transistor with moderate power handling and high-speed characteristics is required. Ensure the operating voltage does not exceed the 45 V breakdown limit and that thermal management accommodates the 830 mW dissipation rating. Verify that the TO-92-3 package fits the available PCB footprint and assembly constraints.

Single Bipolar Transistors Part Context

This component belongs to the BC635 series of NPN transistors produced by NXP Semiconductors. The series is widely recognized for general-purpose use in consumer electronics and industrial equipment. The specific model variant includes standardized electrical parameters and packaging options consistent with industry-standard through-hole transistor applications.

Single Bipolar Transistors Replacement Considerations

Compatible substitutes include the BC635-116 and other generic NPN transistors within the same voltage and current ratings. Verify pinout compatibility and thermal characteristics before substitution.

BC635-16,126BC635-16,126

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