BC637G

Single Bipolar Transistors Overview

The BC637G is an NPN silicon epitaxial planar transistor manufactured by onsemi, designed for general-purpose amplification and switching applications. It features a collector-emitter breakdown voltage of 80 V and a maximum continuous collector current of 1 A. The device operates within a junction temperature range of -55 °C to +150 °C and has a maximum power dissipation rating of 625 mW in its TO-226-3 (TO-92) package. The component exhibits a minimum DC current gain (hFE) of 40 at a collector current of 150 mA and a collector-emitter voltage of 2 V.

Single Bipolar Transistors Feature Summary

• NPN polarity configuration suitable for low-power signal processing
• Epitaxial planar silicon construction for reliable operation
• Through-hole mounting capability via standard leaded package

Single Bipolar Transistors Applications

• General-purpose amplifier circuits
• Low-speed electronic switching applications
• Signal conditioning stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'G' against the manufacturer's official datasheet to confirm compliance with RoHS directives and material declarations. Ensure the ordering part number matches the exact electrical specifications required for the design, as variations may exist between manufacturers or production batches.

Single Bipolar Transistors Selection Notes

Select this component when an NPN transistor with 80 V breakdown and 1 A current capacity is required in a small through-hole package. Confirm that the thermal management strategy supports the 625 mW dissipation limit under expected operating conditions and ambient temperatures.

Single Bipolar Transistors Part Context

This component belongs to the BC63x series of NPN transistors from onsemi. It serves as a complementary or alternative device to other general-purpose bipolar junction transistors in the same family, offering standardized performance metrics for common electronic circuit designs requiring moderate power handling.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data.