BC638,116

Single Bipolar Transistors Overview

The BC638,116 is a PNP medium power silicon planar epitaxial transistor manufactured by NXP Semiconductors. It is housed in a TO-92 (SOT54) plastic package designed for through-hole mounting. The device supports a continuous collector current of 1 A and features a collector-emitter voltage rating of 60 V. Key electrical characteristics include a minimum DC current gain of 63 at -150 mA and a transition frequency of 100 MHz.

Single Bipolar Transistors Feature Summary

• High current capability with a maximum continuous collector current of 1 A
• Low voltage operation with a collector-emitter voltage rating of 60 V
• Designed for audio and video amplifier applications

Single Bipolar Transistors Applications

• Audio amplifiers
• Video amplifiers

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm the exact variant and packaging configuration. Ensure compatibility with the target PCB footprint and thermal management requirements. Confirm RoHS compliance status if required by the manufacturing process. Cross-reference the manufacturer's latest datasheet for any updates to absolute maximum ratings or pin configurations before finalizing the design.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with high current handling and moderate voltage ratings is required. It serves as the complementary pair to the BC637 NPN transistor. Consider the thermal resistance and power dissipation limits relative to the ambient temperature and board layout. Verify that the required current gain meets the circuit specifications under the intended operating conditions.

Single Bipolar Transistors Part Context

This part belongs to the BC63x series of PNP medium power transistors produced by Philips/NXP Semiconductors. The series includes variants with different voltage ratings: BC636 (45 V), BC638 (60 V), and BC640 (80 V). All share the same physical package and general functional characteristics, differing primarily in their breakdown voltage capabilities.

Single Bipolar Transistors Replacement Considerations

BC638,112

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the BC638?

The maximum collector-emitter voltage (VCEO) for the BC638 is 60 V.

Which NPN transistor is the complement to the BC638?

The BC637 is the NPN complement to the BC638 PNP transistor.

What is the transition frequency of the BC638?

The transition frequency (fT) is specified as 100 MHz under standard test conditions.