BC639-10-AP

Single Bipolar Transistors Overview

The BC639-10-AP is an NPN epitaxial silicon transistor in a TO-92 package. It supports a collector-emitter voltage of 80 V and a continuous collector current of 1 A with 1 W power dissipation. The -10 suffix specifies a DC current gain (hFE) range of 100 to 250 at IC=150mA, VCE=2V. Transition frequency is 100 MHz. Thermal resistance is 125°C/W. Operating junction temperature ranges from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• NPN epitaxial silicon construction for medium power applications
• High DC current gain variant (-10 suffix) providing 100 to 250 amplification
• Lead-free finish compliant with RoHS standards
• Epoxy casing meets UL 94 V-0 flammability rating

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Amplifier stages requiring high current gain
• Driver circuits for loads up to 1 A

Single Bipolar Transistors Procurement Notes

Verify the part number includes the -AP suffix to confirm ammo packing configuration. Ensure the -10 suffix is present to guarantee the specific hFE gain bin of 100 to 250. Confirm RoHS compliance status if environmental regulations apply. Check for authorized distributor sourcing to avoid counterfeit components.

Single Bipolar Transistors Selection Notes

Select this component when a standard NPN transistor requires a guaranteed minimum current gain of 100. The 1 A collector current rating suits moderate load driving tasks. The TO-92 package is suitable for through-hole mounting where space allows. Verify thermal management requirements against the 125°C/W junction-to-ambient resistance.

Single Bipolar Transistors Part Context

This device belongs to the BC639 family of NPN medium power transistors manufactured by Micro Commercial Components. The -AP suffix indicates Ammo packing, while the -10 suffix defines the specific gain classification. It serves as a general-purpose replacement for similar NPN transistors in consumer electronics and industrial control boards.

Single Bipolar Transistors Replacement Considerations

Compatible substitutes include the BC639-10 from other manufacturers such as onsemi or NXP, provided they match the TO-92 package and 100-250 hFE gain range. Verify pinout compatibility (Emitter, Collector, Base) before substitution.

Single Bipolar Transistors FAQ

What is the DC current gain range for the BC639-10?

The BC639-10 has a DC current gain (hFE) ranging from 100 to 250, measured at IC=150mA and VCE=2V.

What does the -AP suffix indicate?

The -AP suffix designates that the device is packed in Ammo packaging format.

Is the BC639-10-AP RoHS compliant?

Yes, the device features a lead-free finish and is RoHS compliant, as indicated by the 'P' suffix designation in the manufacturer's ordering information.