Single Bipolar Transistors BC639,116 product image

BC639,116

  • Description:TRANS NPN 80V 1A TO-92-3
  • Series:-

SKU:7d8f9a4d8eb9 Category: Brand:

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BC639,116 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is TRANS NPN 80V 1A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC639,116

  • Description:TRANS NPN 80V 1A TO-92-3
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
  • Power - Max:830 mW
  • Frequency - Transition:180MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BC639,116

BC639,116

Single Bipolar Transistors Overview

The BC639,116 is an NPN medium power transistor manufactured by NXP Semiconductors. It belongs to the BC635/BC637/BC639 family designed for general-purpose amplification and switching applications. Key electrical characteristics include a maximum collector current (IC) of 1 A and a maximum collector-emitter voltage (VCEO) of 80 V. The device features a nominal transition frequency (fT) of 100 MHz and a maximum power dissipation of 0.83 W. It operates within a junction temperature range up to 150 °C and complies with RoHS standards.

Single Bipolar Transistors Feature Summary

  • High current handling capability suitable for medium power applications
  • Low voltage operation optimized for standard circuit requirements
  • NPN polarity configuration for versatile switching and amplification

Single Bipolar Transistors Applications

  • General-purpose amplification circuits
  • Electronic switching applications
  • Medium power signal processing

Single Bipolar Transistors Procurement Notes

Verify the specific ordering code BC639,116 against official NXP documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with design constraints regarding thermal management and voltage ratings. Cross-reference datasheet revisions to confirm parameter stability and compliance status before integration into production systems.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring NPN transistors with 1 A continuous collector current and 80 V breakdown voltage. Consider the 0.83 W power dissipation limit for thermal design. Verify that the transition frequency meets the signal bandwidth requirements of the intended application compared to lower or higher speed alternatives in the same family.

Single Bipolar Transistors Part Context

The BC639,116 is part of the BC635, BC637, and BC639 series of NPN medium power transistors produced by Philips/NXP Semiconductors. This family provides standardized performance levels for various current and voltage combinations, facilitating modular design approaches in consumer electronics and industrial control systems where reliable medium-power switching is required.

Single Bipolar Transistors Replacement Considerations

Compatible substitutes within the same family include the BC635 and BC639 variants, which share similar structural designs but differ in voltage or current ratings. Verify pinout compatibility and thermal characteristics when substituting to ensure circuit integrity without redesigning the PCB layout.

BC639,116BC639,116

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