BC639RL1

Single Bipolar Transistors Overview

The BC639RL1G is an NPN silicon transistor in a TO-92 package. It supports a maximum collector-emitter voltage of 80 V and continuous collector current of 1 A. Total device dissipation is 625 mW at 25°C ambient temperature, derating by 5.0 mW/°C above this threshold. The junction-to-ambient thermal resistance is 200 °C/W. Operating and storage temperatures range from -55°C to +150°C. DC current gain ranges from 40 to 160 at 150 mA. Transition frequency is typically 200 MHz.

Single Bipolar Transistors Feature Summary

• High current capability with a maximum continuous collector current of 1 A
• Low voltage operation rated for up to 80 V collector-emitter breakdown
• Suitable for general-purpose amplification and switching applications

Single Bipolar Transistors Applications

• General-purpose amplifiers
• Switching circuits
• Driver stages

Single Bipolar Transistors Procurement Notes

Verify the exact ordering suffix against the manufacturer's official documentation before procurement. Confirm that the specific variant matches the required packaging format and lead-free status. Ensure the component meets all applicable RoHS compliance standards for your region. Cross-reference the datasheet revision date to confirm the accuracy of the electrical parameters provided.

Single Bipolar Transistors Selection Notes

Select this component based on its 80 V collector-emitter voltage rating and 1 A continuous current capacity. Evaluate the thermal requirements against the specified 625 mW dissipation limit at 25°C ambient conditions. Consider the transition frequency characteristics if high-speed switching or amplification is required. Verify that the TO-92 through-hole package aligns with the target PCB layout constraints.

Single Bipolar Transistors Part Context

This part belongs to the BC63x series of NPN silicon transistors manufactured by onsemi. The series includes variants with different voltage ratings, such as the BC635 (45 V) and BC637 (60 V). The BC639 specifically provides an 80 V rating while maintaining identical current handling and package dimensions across the family.

Single Bipolar Transistors Replacement Considerations

BC639G

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the BC639?

The maximum collector-emitter voltage (VCEO) is 80 Vdc.

How does the power dissipation change with temperature?

Total device dissipation is 625 mW at 25°C ambient temperature and must be derated by 5.0 mW/°C for temperatures above 25°C.

What is the typical transition frequency?

The current gain-bandwidth product (fT) is typically 200 MHz when measured at 50 mA collector current and 2 V collector-emitter voltage.