BC639RL1G

Single Bipolar Transistors Overview

The BC639RL1G is an NPN silicon bipolar junction transistor manufactured by onsemi. It features a TO-92-3 through-hole package with a maximum DC collector current of 1 A and a collector-emitter voltage (VCEO) of 80 V. The device has a power dissipation rating of 625 mW, a transition frequency (fT) of 200 MHz, and a minimum DC current gain (hFE) of 25. It operates within a temperature range of -55 °C to +150 °C.

Single Bipolar Transistors Feature Summary

• NPN silicon construction for general-purpose switching and amplification
• High collector current capability up to 1 A
• Wide operating junction temperature range

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Amplifier stages
• Driver applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix RL1G against official documentation to confirm packaging details such as reel or cut tape specifications. Confirm RoHS compliance status directly from the manufacturer datasheet. Check the product lifecycle status, as discontinuance notices may affect long-term availability.

Single Bipolar Transistors Selection Notes

Select this component when an NPN transistor with 80 V collector-emitter voltage and 1 A continuous current capacity is required in a TO-92 package. Ensure the application demands a minimum hFE of 25 and can accommodate a 625 mW power dissipation limit at ambient temperatures.

Single Bipolar Transistors Part Context

This part belongs to the BC639 series of NPN medium power transistors produced by onsemi. The series is designed for general-purpose applications requiring moderate current handling and voltage ratings in standard through-hole packages.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides for verified equivalents. Generic replacements must match the NPN polarity, TO-92 package, and electrical limits of 80 V and 1 A.